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Plasma assisted-MBE of GaN and AlN on graphene buffer layers

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dc.contributor.authorKovalchuk, N. G.
dc.contributor.authorBorisenko, D. P.
dc.contributor.authorGusev, A. S.
dc.contributor.authorKargin, N. I.
dc.contributor.authorKomissarov, I. V.
dc.contributor.authorLabunov, V. A.
dc.contributor.authorБорисенко, Денис Петрович
dc.contributor.authorГусев, Александр Сергеевич
dc.contributor.authorКаргин, Николай Иванович
dc.contributor.authorЛабунов, Владимир
dc.date.accessioned2024-11-21T10:12:48Z
dc.date.available2024-11-21T10:12:48Z
dc.date.issued2019
dc.description.abstractThe possibility of using chemical vapor deposition (CVD) graphene as a 2D buffer layer for epitaxial growth of III-nitrides by plasma assisted-MBE on amorphous substrates (SiO2 prepared by thermal oxidation of Si wafer) was investigated. The comparative study of graphene-coated parts of the wafers and the parts without graphene was carried out by scanning electron microscopy and X-ray diffractometry. It was shown that epitaxial GaN and AlN films with close to 2D surface morphology can be obtained by plasma assisted-MBE on amorphous SiO2 substrates with a multilayer graphene buffer using the HT AlN nucleation layer. (C) 2019 The Japan Society of Applied Physics
dc.identifier.citationPlasma assisted-MBE of GaN and AlN on graphene buffer layers / Kovalchuk, NG [et al.] // Japanese Journal of Applied Physics. - 2019. - 58. - 10.7567/1347-4065/ab124b
dc.identifier.doi10.7567/1347-4065/ab124b
dc.identifier.urihttps://www.doi.org/10.7567/1347-4065/ab124b
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85070779621&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000474911400054
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/18384
dc.relation.ispartofJapanese Journal of Applied Physics
dc.titlePlasma assisted-MBE of GaN and AlN on graphene buffer layers
dc.typeArticle
dspace.entity.typePublication
oaire.citation.volume58
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