Publication:
Influence of contacts and applied voltage on a structure of a single GaN nanowire

Дата
2021
Авторы
Lazarev, S.
Kim, Y. Y.
Gelisio, L.
Bi, Z.
Khubbutdinov, R.
Vartanyants, I. A.
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Научные группы
Организационные подразделения
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Организационная единица
Институт лазерных и плазменных технологий
Стратегическая цель Института ЛаПлаз – стать ведущей научной школой и ядром развития инноваций по лазерным, плазменным, радиационным и ускорительным технологиям, с уникальными образовательными программами, востребованными на российском и мировом рынке образовательных услуг.
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Аннотация
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.Semiconductor nanowires (NWs) have a broad range of applications for nano-and optoelectronics. The strain field of gallium nitride (GaN) NWs could be significantly changed when contacts are applied to them to form a final device, especially considering the piezoelectric properties of GaN. Investigation of influence of the metallic contacts on the structure of the NWs is of high importance for their applications in real devices. We have studied a series of different type of contacts and influence of the applied voltage bias on the contacted GaN NWs with the length of about 3 to 4 micrometers and with two different diameters of 200 nm and 350 nm. It was demonstrated that the NWs with the diameter of 200 nm are bend already by the interaction with the substrate. For all GaN NWs, significant structural changes were revealed after the contacts deposition. The results of our research may contribute to the future optoelectronic applications of the GaN nanowires.
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Influence of contacts and applied voltage on a structure of a single GaN nanowire / Lazarev, S. [et al.] // Applied Sciences (Switzerland). - 2021. - 11. - № 20. - 10.3390/app11209419
URI
https://www.doi.org/10.3390/app11209419
 https://www.scopus.com/record/display.uri?eid=2-s2.0-85117206569&origin=resultslist
 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000714798500001
 https://openrepository.mephi.ru/handle/123456789/24812
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