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D-mode pHEMT 0.5 um Process Characterization to Wide-Band LNA Design

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dc.contributor.authorSotskov, D. I.
dc.contributor.authorUsachev, N. A.
dc.contributor.authorElesin, V. V.
dc.contributor.authorKuznetsov, A. G.
dc.contributor.authorAmburkin, K. M.
dc.contributor.authorChukov, G. V.
dc.contributor.authorTitova, M. I.
dc.contributor.authorZidkov, N. M.
dc.contributor.authorСотсков, Денис Иванович
dc.contributor.authorУсачев, Николай Александрович
dc.contributor.authorЕлесин, Вадим Владимирович
dc.contributor.authorКузнецов, Александр Геннадьевич
dc.contributor.authorАмбуркин, Константин Михайлович
dc.contributor.authorЧуков, Георгий Викторович
dc.contributor.authorЖидков, Никита Михайлович
dc.date.accessioned2024-11-21T14:54:05Z
dc.date.available2024-11-21T14:54:05Z
dc.date.issued2019
dc.description.abstract© 2019 IEEE.Results of domestic D-mode pHEMT 0.5 μm process characterization obtained during the design and testing of the single power supply wide-band low noise amplifier (LNA) are present. The simulation and test results demonstrate that designed cascode LNA has operating frequency range up to 3.5 GHz, power gain above 15 dB, noise figure below 2.2 dB, output linearity above than 17 dBm and power consumption less than 325 mW. Potential immunity of LNA to total ionizing dose and destructive single event effects exceed 300 krad and 60 MeV·cm2/mg respectively.
dc.format.extentС. 99-102
dc.identifier.citationD-mode pHEMT 0.5 um Process Characterization to Wide-Band LNA Design / Sotskov, D.I. [et al.] // 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings. - 2019. - P. 99-102. - 10.1109/MIEL.2019.8889636
dc.identifier.doi10.1109/MIEL.2019.8889636
dc.identifier.urihttps://www.doi.org/10.1109/MIEL.2019.8889636
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85075359033&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000565455600018
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/18907
dc.relation.ispartof2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings
dc.titleD-mode pHEMT 0.5 um Process Characterization to Wide-Band LNA Design
dc.typeConference Paper
dspace.entity.typePublication
relation.isAuthorOfPublicationcadd9d6c-774c-43ae-b00e-388fa8690f2d
relation.isAuthorOfPublicationfc7699f3-cbf0-4021-9c88-a08fa1c76ad3
relation.isAuthorOfPublication608226cb-7326-48db-8860-0267814b0820
relation.isAuthorOfPublication438da91a-86f8-43ed-9774-dcb61757a6c5
relation.isAuthorOfPublication690f9afb-986a-4732-8e38-963a6c62049e
relation.isAuthorOfPublicationd724e4cb-714a-4e50-a262-ce949f36fd58
relation.isAuthorOfPublicationd680187b-d822-483b-a405-82b3ceee2d2c
relation.isAuthorOfPublication.latestForDiscoverycadd9d6c-774c-43ae-b00e-388fa8690f2d
relation.isOrgUnitOfPublication06e1796d-4f55-4057-8d7e-bb2f3b5676f5
relation.isOrgUnitOfPublication543ffddb-d115-4466-be75-83b0f2c5a473
relation.isOrgUnitOfPublication.latestForDiscovery06e1796d-4f55-4057-8d7e-bb2f3b5676f5
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