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Analytic Modeling of the of J- V Characteristics of Quantum Dot-Based Photovoltaic Cells

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dc.contributor.authorTameev, A. R.
dc.contributor.authorAleksandrov, A. E.
dc.contributor.authorSaunina, A. Yu.
dc.contributor.authorNikitenko, V. R.
dc.contributor.authorChistyakov, A. A.
dc.contributor.authorZvaizgne, M. A.
dc.contributor.authorСаунина, Анна Юрьевна
dc.contributor.authorНикитенко, Владимир Роленович
dc.contributor.authorЧистяков, Александр Александрович
dc.date.accessioned2024-11-21T09:54:44Z
dc.date.available2024-11-21T09:54:44Z
dc.date.issued2019
dc.description.abstractAn analytic model of J-V characteristics of photovoltaic devices based on quantum dot (QD) solids is developed. The model yields the upper estimation of the power conversion efficiency and predicts its extremal dependence on the diffusion length of excitons. The predictive power of our model is approved by the comparison with the experimental data for PbS QD-based solar cells.
dc.identifier.citationAnalytic Modeling of the of J- V Characteristics of Quantum Dot-Based Photovoltaic Cells / Tameev, AR [et al.] // International Journal of Nanoscience. - 2019. - 18. - № 3-4. - 10.1142/S0219581X19400830
dc.identifier.doi10.1142/S0219581X19400830
dc.identifier.urihttps://www.doi.org/10.1142/S0219581X19400830
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85068170314&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000472775200084
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/18323
dc.relation.ispartofInternational Journal of Nanoscience
dc.titleAnalytic Modeling of the of J- V Characteristics of Quantum Dot-Based Photovoltaic Cells
dc.typeConference Paper
dspace.entity.typePublication
oaire.citation.issue3-4
oaire.citation.volume18
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