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Chemical etching induced surface modification and gentle gradient bandgap for highly efficient Sb2(S,Se)3 solar cell

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dc.contributor.authorWang, X.
dc.contributor.authorShi, X.
dc.contributor.authorZhang, F.
dc.contributor.authorZhou, F.
dc.contributor.authorQu, J.
dc.date.accessioned2024-12-26T07:15:27Z
dc.date.available2024-12-26T07:15:27Z
dc.date.issued2022
dc.description.abstract© 2021 Elsevier B.V.Recently, due to its excellent photovoltaic features, Sb2(S,Se)3 is regarded as a promising photovoltaic absorber material. However, the interfacial property of Sb2(S,Se)3-based solar cell still needs to be studied due to limited efficiency improvement resulting from interfacial defects. In this paper, we focus on Sb2(S,Se)3 film prepared by hydrothermal method to investigate the effects of surface modification on the properties of the Sb2(S,Se)3 film as well as its solar cell performance. Interestingly, the chemical etching performed on Sb2(S,Se)3 film using potassium fluoride aqueous solution not only improved the crystallinity and uniformity of Sb2(S,Se)3 film but also decreased the interfacial defects, leading to a reduced carrier recombination loss of the device. As a result of chemical modification, the current density and fill factor of Sb2(S,Se)3-based superstrate structure solar devices were improved, resulting in maximum efficiency of 9.58%. Overall, this research offers a comprehensive understanding of the hydrothermally processed Sb2(S,Se)3 film as well as a viable alternative method for reducing interfacial defects in other chalcogenide semiconductors.
dc.identifier.citationChemical etching induced surface modification and gentle gradient bandgap for highly efficient Sb2(S,Se)3 solar cell / Wang, X. [et al.] // Applied Surface Science. - 2022. - 579. - 10.1016/j.apsusc.2021.152193
dc.identifier.doi10.1016/j.apsusc.2021.152193
dc.identifier.urihttps://www.doi.org/10.1016/j.apsusc.2021.152193
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85121272956&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000736686700002
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/28612
dc.relation.ispartofApplied Surface Science
dc.titleChemical etching induced surface modification and gentle gradient bandgap for highly efficient Sb2(S,Se)3 solar cell
dc.typeArticle
dspace.entity.typePublication
oaire.citation.volume579
relation.isOrgUnitOfPublicationc8407a6f-7272-450d-8d99-032352c76b55
relation.isOrgUnitOfPublication.latestForDiscoveryc8407a6f-7272-450d-8d99-032352c76b55
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