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PRODUCTION AND RECOVERY OF RADIATION-INDUCED DE-FECTS IN TUNGSTEN

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dc.contributor.authorOGORODNIKOVA, O. V.
dc.contributor.authorSUGIYAMA, K.
dc.contributor.authorCIUPIŃSKI, Ł.
dc.contributor.authorGRZONKA, J.
dc.contributor.authorGASPARYAN, Yu.
dc.contributor.authorEFIMOV, V.
dc.contributor.authorГаспарян, Юрий Микаэлович
dc.contributor.authorОгородникова, Ольга Вячеславовна
dc.contributor.authorЕфимов, Виталий Сергеевич
dc.date.accessioned2025-04-04T08:53:37Z
dc.date.available2025-04-04T08:53:37Z
dc.date.issued2014
dc.description.abstractAccumulation and recovery of radiation defects under/after self-ion irradia-tion in tungsten (W) have been investigated via decoration with deuterium (D) and scanning transmission electron microscopy. The deuterium was incorpo-rated in damaged material by low-energy D plasma. The D retention at radia-tion-induced defects in each sample was subsequently measured by nuclear reaction analysis allowing determination of the D concentration at depths up to 6 μm. The total D retention was measured by thermal desorption spectroscopy. It was shown that pre-irradiation with self-ions led to rather high D retention (≥ 0.1 at.%) in W even at high temperatures (≥ 700 K) due to formation of defects with high de-trapping energy for deuterium. The annealing of defects with low trapping energy for D occurs intensively in the temperature range between 300 and 700 K. The radiation-induced defects with high de-trapping energy for D are thermally stable at least up to 1100 K. Moreover, the clear evidence of an increase of the D retention at radiation-induced defects in polycrystalline W at annealing temperature of around 1000 K was found. This observation suggested that 1000 K can be maximum temperature of agglomeration of vacancy clusters in nano- or micro-voids. This conclusion was supported by scanning transmis-sion electron microscopy data which showed a coalescence of small clusters in big ones after annealing. The increase of the D retention at annealing tempera-ture of ~1000 K was not observed for recrystallized W. The mechanism of re-covery of radiation-induced defects depending on the grain size and impurities is discussed.
dc.identifier.citationPRODUCTION AND RECOVERY OF RADIATION-INDUCED DE-FECTS IN TUNGSTEN [Текст.] / OGORODNIKOVA O. V.[и др.] // Взаимодействие плазмы с поверхностью: сборник научных трудов XVII конференции. - 2014. - C. 85
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/36808
dc.publisherНИЯУ МИФИ
dc.subjectКонференции НИЯУ МИФИ
dc.titlePRODUCTION AND RECOVERY OF RADIATION-INDUCED DE-FECTS IN TUNGSTEN
dc.typeArticle
dspace.entity.typePublication
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2014_Конференция "Взаимодействие плазмы с поверхностью" (XVII; Москва, 30-31 января 2014 г.)