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Comparison of the thermal interdiffusion phenomena in InGaAs/GaAs and InGaAs/AlGaAs strained heterostructures

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dc.contributor.authorVasilkova, E. I.
dc.contributor.authorKlochkov, A. N.
dc.contributor.authorVinichenko, A. N.
dc.contributor.authorKargin, N. I.
dc.contributor.authorVasil'evskii, I. S.
dc.contributor.authorКлочков, Алексей Николаевич
dc.contributor.authorВиниченко, Александр Николаевич
dc.contributor.authorКаргин, Николай Иванович
dc.contributor.authorВасильевский, Иван Сергеевич
dc.date.accessioned2024-12-26T09:25:21Z
dc.date.available2024-12-26T09:25:21Z
dc.date.issued2022
dc.description.abstractThe effect of 5 min high-temperature thermal annealing on InGaAs/GaAs strained superlattices and InGaAs/ AlGaAs PHEMT structures grown by molecular beam epitaxy was studied using the Hall measurements, pho-toluminescence spectroscopy, and high-resolution X-ray diffraction. InGaAs/GaAs superlattices are shown to undergo photoluminescence peak energy blueshift after 700 degrees C annealing and distinguishable heterointerface roughening after 800 degrees C annealing. The magnitude of quantum well smoothing, caused by annealing induced III-group atom interdiffusion, was estimated experimentally using secondary ion mass spectrometry and X-ray reflectivity, and calculated from the modelled electron energy spectra in the diffused wells. InGaAs/AlGaAs PHEMTs appear to be more sensitive to annealing, demonstrating optical and structural changes of a similar nature to InGaAs/GaAs heterostructures, as well as transport properties degradation, at a wider range of annealing temperatures starting 500 degrees C.
dc.identifier.citationComparison of the thermal interdiffusion phenomena in InGaAs/GaAs and InGaAs/AlGaAs strained heterostructures / Vasilkova, EI [et al.] // Surfaces and Interfaces. - 2022. - 29. - 10.1016/j.surfin.2022.101766
dc.identifier.doi10.1016/j.surfin.2022.101766
dc.identifier.urihttps://www.doi.org/10.1016/j.surfin.2022.101766
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85123749231&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000764954900006
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/28831
dc.relation.ispartofSurfaces and Interfaces
dc.titleComparison of the thermal interdiffusion phenomena in InGaAs/GaAs and InGaAs/AlGaAs strained heterostructures
dc.typeArticle
dspace.entity.typePublication
oaire.citation.volume29
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