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Monoisotopic Ensembles of Silicon-Vacancy Color Centers with Narrow-Line Luminescence in Homoepitaxial Diamond Layers Grown in H2-CH4-[ x]SiH4 Gas Mixtures (x = 28, 29, 30)

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dc.contributor.authorSedov, V. S.
dc.contributor.authorMartyanov, A. K.
dc.contributor.authorBoldyrev, K. N.
dc.contributor.authorKrivobok, V. S.
dc.contributor.authorRalchenko, V. G.
dc.contributor.authorBolshakov, A. P.
dc.contributor.authorKonov, V. I.
dc.date.accessioned2024-11-20T09:21:44Z
dc.date.available2024-11-20T09:21:44Z
dc.date.issued2019
dc.description.abstract© 2018 American Chemical Society. Silicon-vacancy (SiV-) color center in diamond is of high interest for applications in nanophotonics and quantum information technologies, as a single photon emitter with excellent spectral properties. To obtain spectrally identical SiV- emitters, we doped homoepitaxial diamond films in situ with 28Si, 29Si, and 30Si isotopes using isotopically enriched (>99.9%) silane SiH4 gas added in H2-CH4 mixtures in the course of the microwave plasma-assisted chemical vapor deposition process. Zero-phonon line components as narrow as ∼4.8 GHz were measured in both absorption and luminescence spectra for the monoisotopic SiV- ensembles with a concentration of a few parts per billion. We determined with high accuracy the Si isotopic energy shift of SiV- zero-phonon line. The SiV- emission intensity is shown to be easily controlled by the doped epifilm thickness. Also, we identified and characterized the localized single photon SiV- sources. The developed doping process opens a way to produce the SiV- emitter ensembles with energy confined in an extremely narrow range.
dc.format.extentС. 66-72
dc.identifier.citationMonoisotopic Ensembles of Silicon-Vacancy Color Centers with Narrow-Line Luminescence in Homoepitaxial Diamond Layers Grown in H2-CH4-[ x]SiH4 Gas Mixtures (x = 28, 29, 30) / Sedov, V.S. [et al.] // ACS Photonics. - 2019. - 6. - № 1. - P. 66-72. - 10.1021/acsphotonics.8b01464
dc.identifier.doi10.1021/acsphotonics.8b01464
dc.identifier.urihttps://www.doi.org/10.1021/acsphotonics.8b01464
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85060181452&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000456350400010
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/16474
dc.relation.ispartofACS Photonics
dc.titleMonoisotopic Ensembles of Silicon-Vacancy Color Centers with Narrow-Line Luminescence in Homoepitaxial Diamond Layers Grown in H2-CH4-[ x]SiH4 Gas Mixtures (x = 28, 29, 30)
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue1
oaire.citation.volume6
relation.isOrgUnitOfPublicationdcdb137c-0528-46a5-841b-780227a67cce
relation.isOrgUnitOfPublicationc8407a6f-7272-450d-8d99-032352c76b55
relation.isOrgUnitOfPublication.latestForDiscoverydcdb137c-0528-46a5-841b-780227a67cce
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