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The research for approaches to increase power of the compact thz emitters based on low-temperature gallium arsenide heterostructures

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dc.contributor.authorNomoev, S.
dc.contributor.authorVasilevskii, I.
dc.contributor.authorVinichenko, A.
dc.contributor.authorНомоев, Сергей Андреевич
dc.contributor.authorВасильевский, Иван Сергеевич
dc.contributor.authorВиниченко, Александр Николаевич
dc.date.accessioned2024-11-27T08:20:09Z
dc.date.available2024-11-27T08:20:09Z
dc.date.issued2020
dc.description.abstract© 2020 Trans Tech Publications Ltd, SwitzerlandThe design and technological conditions for the manufacture of photoconductive antennas based on low-temperature gallium arsenide (LT-GaAs) have been developed. The optimized photoconductive THz antenna is made based on LT-GaAs with the flag geometry of the contacts and with the interdigitated structure including metal closing through the dielectric of each second period. LT-GaAs samples were obtained by molecular beam epitaxy at temperatures of 210 ̊C, 230 ̊C, 240 ̊C on GaAs substrates (100). Dark and photocurrent were measured depending on the bias voltage of the LT-GaAs heterostructure at the EP6 probe station. Full wave finite element method solver has been used to investigate the proposed plasmon PCA electrical and optical behavior by combining the Maxwell's wave equation with the drift-diffusion/Poisson equations.
dc.format.extentС. 101-108
dc.identifier.citationNomoev, S. The research for approaches to increase power of the compact thz emitters based on low-temperature gallium arsenide heterostructures / Nomoev, S., Vasilevskii, I., Vinichenko, A. // Solid State Phenomena. - 2020. - 310 SSP. - P. 101-108. - 10.4028/www.scientific.net/SSP.310.101
dc.identifier.doi10.4028/www.scientific.net/SSP.310.101
dc.identifier.urihttps://www.doi.org/10.4028/www.scientific.net/SSP.310.101
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85091723953&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/22417
dc.relation.ispartofSolid State Phenomena
dc.titleThe research for approaches to increase power of the compact thz emitters based on low-temperature gallium arsenide heterostructures
dc.typeConference Paper
dspace.entity.typePublication
oaire.citation.volume310 SSP
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