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Improvement of the current - Voltage performance of broadened asymmetric waveguide InGaAs/AlGaAs/GaAs semiconductor lasers ( λ = 940 - 980 nm)

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dc.contributor.authorVolkov, N. A.
dc.contributor.authorTelegin, K. Y.
dc.contributor.authorGultikov, N. V.
dc.contributor.authorSabitov, D. R.
dc.contributor.authorMarmalyuk, A. A.
dc.contributor.authorKozyrev, A. A.
dc.contributor.authorМармалюк, Александр Анатольевич
dc.contributor.authorКозырев, Антон Андреевич
dc.date.accessioned2024-12-26T09:03:34Z
dc.date.available2024-12-26T09:03:34Z
dc.date.issued2022
dc.description.abstract© 2022 Kvantovaya Elektronika and IOP Publishing Limited.The purpose of this work is to improve the current - voltage (I - V) performance of semiconductor lasers based on broadened asymmetric waveguide InGaAs/AlGaAs/GaAs separate-confinement double heterostructures. We analyse the effect of AlGaAs waveguide layer composition on the output characteristics of the lasers and demonstrate that the decrease in the series resistance of the lasers and the threshold voltage of their I - V characteristic as a result of a decrease in the percentage of AlAs in the waveguide layers shifts the drop in the differential quantum efficiency of the lasers to higher pump currents, despite the decrease in the energy depth of the quantum wells in the active region.
dc.format.extentС. 179-181
dc.identifier.citationImprovement of the current - Voltage performance of broadened asymmetric waveguide InGaAs/AlGaAs/GaAs semiconductor lasers ( λ = 940 - 980 nm) / Volkov, N.A. [et al.] // Quantum Electronics. - 2022. - 52. - № 2. - P. 179-181. - 10.1070/QEL17987
dc.identifier.doi10.1070/QEL17987
dc.identifier.urihttps://www.doi.org/10.1070/QEL17987
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85125721480&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000754667100014
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/28795
dc.relation.ispartofQuantum Electronics
dc.titleImprovement of the current - Voltage performance of broadened asymmetric waveguide InGaAs/AlGaAs/GaAs semiconductor lasers ( λ = 940 - 980 nm)
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue2
oaire.citation.volume52
relation.isAuthorOfPublicationa2274cc1-6ae2-4b20-a7bd-edb50d75fca3
relation.isAuthorOfPublication344a4f46-1805-4637-a25a-0135ae68d4d9
relation.isAuthorOfPublication.latestForDiscoverya2274cc1-6ae2-4b20-a7bd-edb50d75fca3
relation.isOrgUnitOfPublicationc8407a6f-7272-450d-8d99-032352c76b55
relation.isOrgUnitOfPublication.latestForDiscoveryc8407a6f-7272-450d-8d99-032352c76b55
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