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Charge Properties of Thorium Implanted in Silicon Oxide

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dc.contributor.authorKurelchuk, U. N.
dc.contributor.authorBorisyuk, P. B.
dc.contributor.authorNikolaev, A. V.
dc.contributor.authorTkalya, E. V.
dc.contributor.authorКурельчук, Ульяна Николаевна
dc.contributor.authorБорисюк, Петр Викторович
dc.contributor.authorНиколаев, Александр Васильевич
dc.contributor.authorТкаля, Евгений Викторович
dc.date.accessioned2024-11-27T16:48:01Z
dc.date.available2024-11-27T16:48:01Z
dc.date.issued2020
dc.description.abstract© 2020, Pleiades Publishing, Ltd.Abstract: A study of thorium atoms implanted in silicon oxide was carried out within the density functional theory method. The charge properties of Th in the ThO2:nSiO2 and Th:nSiO2 compounds, where Th acts as an interstitial and substitutional impurity in cristobalite, have been studied. Geometric optimization of structures is carried out with allowance for electron-electron interactions, self-consistent distribution of electron density is investigated, and Bader effective charges are estimated.
dc.format.extentС. 1569-1574
dc.identifier.citationCharge Properties of Thorium Implanted in Silicon Oxide / Kurelchuk, U.N. [et al.] // Physics of Atomic Nuclei. - 2020. - 83. - № 11. - P. 1569-1574. - 10.1134/S1063778820120042
dc.identifier.doi10.1134/S1063778820120042
dc.identifier.urihttps://www.doi.org/10.1134/S1063778820120042
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dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/23156
dc.relation.ispartofPhysics of Atomic Nuclei
dc.titleCharge Properties of Thorium Implanted in Silicon Oxide
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue11
oaire.citation.volume83
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