Персона: Байкова, Ольга Андреевна
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Methods for Optimizing the High Efficient Broadband Klystrons
2020, Baikov, A. Y., Baikova, O. A., Байкова, Ольга Андреевна
© 2020 IEEE.The problems of combining a high efficiency value with a wide band in the klystron are discussed. The connection of the gain band with the basic electron-optical parameters is shown. The features of the implementation of the macrostep optimization method for broadband klystrons are shown. The possibility of synthesizing klystrons with an efficiency of 70% with a bandwidth of more than 7% is shown. The possibility of synthesis of ultra-wide-band bunchers with bandwidth about 50% providing the efficiency about 70% in almost whole band is also shown.
Methods for full global optimization of klystron parameters
2019, Baikov, A. Y., Baikova, O. A., Байкова, Ольга Андреевна
© 2019 IEEE.A single scheme of klystron parameter optimization is considered, which includes structure optimization and optimization of the maximum number of input parameters (all parameters of group B). This optimization had been called as the full global optimization (FGO). Discusses two methods FGO: stage-by-stage optimization for the standard configuration of the klystron and the embedding method for the klystron configuration with higher harmonics cavities. It is shown that both methods allow reaching the level of klystron efficiency up to 90%.
On the Possibility of Creation of the Mobil Resotrode-accelerator
2022, Baikov, A. Y., Baikova, O. A., Байков, Андрей Юрьевич, Байкова, Ольга Андреевна
The possibilities of creating a new electro-vacuum device - a mobile resotrode accelerator are considered. This device is supposed to be used as the basis of an accelerator complex for disinfection of bulk products. It is shown that such a device can be developed based on the concept of a resotrode with 0-regeneration. The analysis of such a device with an output beam energy of 2 MeV and powered by a standard diesel generator is carried out. Calculations of the main parameters are carried out and a sketch of the device is presented. © 2022 IEEE.