2019, Horodek, P., Kobets, A. G., Siemek, K., Skuratov, V. A., Скуратов, Владимир Алексеевич

© 2019 Polish Academy of Sciences. All rights reserved.Experimental studies of pure iron exposed to Xe26+ irradiation are reported. Implantations were made with the fluence of 5 × 1013 ions/cm2 using 167 MeV ions moderated to 122.5, 77.0, and 44.5 MeV. Investigations were performed with variable energy positron beam (VEP). Doppler broadening spectroscopy (DB) was applied. The analysis of obtained results gives information about the presence of various kind of open-volume defects. Two layers with different values of positron diffusion lengths were found in implanted samples. The deeper one was more defected.

2019, Мутали, А. К., Сайфулин, М. М., Скуратов, В. А., Янсе ван Вуурен, А., О’Коннелл, Ж. Г., Скуратов, Владимир Алексеевич

The Raman spectroscopy method was used to study the radiation damage formed along the path of swift heavy ions in a yttrium iron garnet (Y3Fe5O12, YIG). YIG single crystals have been irradiated with swift Xe and Bi ions with energies of 167 and 715 MeV, respectively. Irradiation was carried out at room temperature in the range of fluences from 1011 to 1013 ions /cm2. The results obtained in this work is compared with previously obtained direct data (transmission electron microscopy) and indirect methods (Rutherford backscattering spectroscopy, X-ray diffraction).

2019, Cherkova, S. G., Volodin, V. A., Stoffel, M., Rinnert, H., Skuratov, V. A., Скуратов, Владимир Алексеевич

© 2018 Elsevier B.V. Germanium suboxide films and GeO/SiO2 multilayer heterostructures deposited onto Si(001) substrates using evaporation in high vacuum were modified using irradiation of 167 MeV Xe+26 ions with fluences varying from 1011 to 1013 cm−2. According to Raman spectroscopy data, the swift heavy ion irradiation does not lead to the expected decomposition of germanium suboxide in germanium nanoclusters and GeO2. Infrared absorption spectroscopy measurements show that under irradiation the GeO/SiO2 layers were intermixed with formation of Ge-O-Si bonds. We report strong photoluminescence in the visible range at room temperature, which is most probably due to Ge-related defect-induced radiative transitions. Moreover, a new infrared luminescence band (~0.8 eV) was observed in irradiated structures, which can be related to defects or defects complexes in GexSiyO2 glass.

2017, Privezentsev, V. V., Skuratov, V. A., Kulikauskas, V. S., Makunin, A. V., Ksenich, S. V., Steinman, E. A., Tereshchenko, A. N., Скуратов, Владимир Алексеевич

The properties of metal nanoparticles (NPs) are comprehensively investigated because of its possible application in modern opto/microelectronic devices. Metal zinc NPs can be use in UV photo-detectors based on surface plasmon resonance phenomena [1]. There are a number of publications attempted to the formation of metal NPs by supersaturation of silicon with these metals. Among them there are works connected with formation of Zn NPs in Si ion implantation [2-4]. In recent years, there were much attention has been paid to the problems of creating combined microelectronics and photonics systems on silicon substrate. So silicon is non-direct semiconductor, it is not a convenient material for these purposes. The important task is the search for ways to synthesize NPs with a narrow size distribution. Swift heavy ion irradiation (SHI) beams allows selectivity to control the dimensions of formed NPs [5]. As known SHI irradiation lead to formation of so-called latent tracks (nanometer-sized disordered regions around ion trajectory) in many oxide crystals and corresponding track-associated radiation damage may induce the change of NP form from spherical to ellipsoidal. This effect is most noticeable for multiple (about 100 times) SHI impacts [6]. In this work the Zn nanoparticles were synthesized in Si by high-dose and low-energy Zn ion implantation. Then there was carried out the modification of implanted samples by high-energy Xe ion irradiation.

2021, Маматова, М., Скуратов, В. А., Олейничак, А., Даулетбекова, А. К., Гиниятова, Ш. Г., Скуратов, Владимир Алексеевич

Time Correlated Single Photon Counting technique has been used to study the luminescence decay in Al2O3 irradiated with swift heavy ions. As was found, picosecond laser pulse excitation at 445 nm enhances broad overlapped emission bands ranging from 490 to 750 nm with lifetimes gradually increasing from 7 ns (500 nm) to τ = 9 ns (640 nm). The nature of this luminescence is associated with radiative recombination of F2 2+-centers and F2 2+-centers + Cr impurity.

2023, Rymzhanov, R. A., O’Connell, J. H., Medvedev, N., Ćosić, M., Skuratov, V. A., Janse van Vuuren, A., Volkov, A. E., Скуратов, Владимир Алексеевич

Swift heavy ions (SHI) penetrating through a solid lose main part of the energy to the electronic stopping. The extremely high level of the electronic excitation generated by incoming ion at the femtosecond scale is followed by relaxation of the perturbed electron ensemble. Subsequently, the acceleration of target atoms occurs at sub-picosecond times, resulting in the formation of a nanometric damaged region within hundreds of picoseconds after the ion passage. These structural changes can affect its physical, chemical, and mechanical properties of the irradiated target. Due to these features, accelerated ion beams serve as a versatile tool for the patterning and modification of nanometric materials [1,2], as well as the investigation of radiation stability against cosmic rays and fission fragments.

2019, Vasco, H. A., Hlatshwayo, T. T., Motloung, S. V., Mlambo, M., Skuratov, V., Скуратов, Владимир Алексеевич

© 2019 Elsevier Ltd Sintered TiN were implanted with Xe ions of 360 keV to a fluence of 1.1 × 10 16 cm −2 at room temperature (RT) and others were co-irradiated with Xe ions of 167 MeV to a fluence of 3.4 × 10 14 cm −2 and Xe ions of 360 keV to a fluence of 1.1 × 10 16 cm −2 also at RT, successively. Both samples were isochronally annealed at temperatures ranging from 1100 to 1500 °C. Both irradiations caused no amorphization of the sintered TiN, however more defects were retained in the samples implanted with only Xe (360 keV) ions. Annealing of defects retained after irradiations were found to be faster in the co-irradiated samples. The migration behavior of implanted Xe was explained by trapping and de-trapping by defects at temperatures below 1200 °C while at temperatures above 1200 °C, it was dominated by grain boundary diffusion, in the un-irradiated samples. In the co-irradiated samples, Xe migrated via fast grain boundaries.

2021, Мутали, А. К., Скуратов, В. А., Ибраева, А. Д., Жумажанова, А. Т., Даулетбекова, А., Акылбеков, А., Здоровец, М. В., Скуратов, Владимир Алексеевич

The Raman spectroscopy method was used to study the radiation damage and associated internal mechanical stresses in polycrystalline silicon nitride (Si3N4) irradiated with swift heavy 167 MeV Xe and 710 MeV Bi ions. The cross-section and near surface spectra of the irradiated region were registered at room temperature. FWHM parameters - 204 cm−1 and peak position - 862 cm−1 were used to characterize the amorphization and the mechanical stress level.

2021, Korneeva, Е. А., Ibrayeva, A., O’Connell, J., Mutali, A., Sohatsky, A. S., Vershinina, T. N., Skuratov, V. A., Zdorovets, М., Alekseeva, L. S., Nokhrin, A. V., Скуратов, Владимир Алексеевич

In recent years, nuclear industry development must be response to new requirements of safety, sustainability and effectiveness. The operating conditions of nuclear reactors of new design would tend to more damage operation mode, in particular, high temperature and high dozes. Oxide dispersion strengthened (ODS) alloys now have been widely investigated as perspective constructive materials for fuel claddings in Generation IV nuclear reactors due to their high values of high temperature creep resistance and resistance to irradiation swelling [1- 3]. High operation properties of ODS alloys are due to nanosized dielectric particles based mainly on yttrium oxides embedded in the metallic matrix. These thermostable nanosized particles are responsible for resistance to dislocation motion that regulate high-temperature creep resistance and tensile properties at high temperatures as well as provide swelling resistance while acting as sinks for radiation defects. Nowadays most literature data are devoted to study structure stability of ODS alloys under neutron and low-energy ion irradiation that didn’t show any significant effect on the ODS structure [4,5]. At the same time apart from neutron irradiation cladding materials in reactor core will contact with fission fragments (FF) that can dramatically affect the structure of dielectric materials even down to complete amorphization due to high levels of electronic excitation [6]. Therefore, studying the structure behavior of oxide nanoparticles in metallic matrix under FF impact can broaden the idea of operational limits and conditions of ODS steels for new reactors. The aim of present study is the complex investigation of radiation stability of nanostructured Y-Ti-O and Y-Al-O compounds embedded in metallic matrix and as separate oxides at a broad range of electronic stopping power and ion fluences.

2019, Karganov, M. Y., Alchinova, I. B., Polyakova, M. V., Feldman, V. I., Skuratov, V. A., Скуратов, Владимир Алексеевич

© 2019Effects of irradiations of Phage Lambda dry DNA samples at room and cryogenic temperatures with 158 MeV Xe and 48 MeV Ar ions were investigated. These ions primary transfer energy into the electronic subsystem of a target: dE/dx = Se, Se Xe = 10.8 keV/nm and Se Ar = 3.5 keV/nm. Site-specific enzymes restriction endonucleases were applied to indicate DNA damages induced by these ions. Electrophoresis was applied to analyze the dependencies of the distributions of DNA fragments sizes on the ion fluence ranging from 108 cm−2 to 1010 cm−2. Electron paramagnetic resonance (EPR)technique was used to investigate damages of a dry DNA sample irradiated at the cryogenic temperature (140 K)with 158 MeV 132 54Xe26+ ions up to the fluence 8.6·109cm−2. A poorly resolved signal centered at the g-factor value for the free electron g ≈ ge was detected, which probably results from a mixture of different-type radicals trapped in the DNA film. The total concentration of paramagnetic species in this sample was estimated to be 1.3 × 1019 spin/g.