Персона: Скуратов, Владимир Алексеевич
Загружается...
Email Address
Birth Date
Научные группы
Организационные подразделения
Организационная единица
Институт ядерной физики и технологий
Цель ИЯФиТ и стратегия развития - создание и развитие научно-образовательного центра мирового уровня в области ядерной физики и технологий, радиационного материаловедения, физики элементарных частиц, астрофизики и космофизики.
Статус
Фамилия
Скуратов
Имя
Владимир Алексеевич
Имя
13 results
Результаты поиска
Теперь показываю 1 - 10 из 13
- ПубликацияОткрытый доступВРЕМЯ-РАЗРЕШЕННАЯ ФОТОЛЮМИНЕСЦЕНЦИЯ Al2O3, ОБЛУЧЕННОГО ТЯЖЕЛЫМИ ИОНАМИ С ЭНЕРГИЕЙ 1.2 – 3 МэВ/АЕМ(НИЯУ МИФИ, 2021) Маматова, М.; Скуратов, В. А.; Олейничак, А.; Даулетбекова, А. К.; Гиниятова, Ш. Г.; Скуратов, Владимир АлексеевичTime Correlated Single Photon Counting technique has been used to study the luminescence decay in Al2O3 irradiated with swift heavy ions. As was found, picosecond laser pulse excitation at 445 nm enhances broad overlapped emission bands ranging from 490 to 750 nm with lifetimes gradually increasing from 7 ns (500 nm) to τ = 9 ns (640 nm). The nature of this luminescence is associated with radiative recombination of F2 2+-centers and F2 2+-centers + Cr impurity.
- ПубликацияОткрытый доступАМОРФИЗАЦИЯ И МЕХАНИЧЕСКИЕ НАПРЯЖЕНИЯ В Si3N4 ПРИ ОБЛУЧЕНИИ БЫСТРЫМИ ТЯЖЕЛЫМИ ИОНАМИ(НИЯУ МИФИ, 2021) Мутали, А. К.; Скуратов, В. А.; Ибраева, А. Д.; Жумажанова, А. Т.; Даулетбекова, А.; Акылбеков, А.; Здоровец, М. В.; Скуратов, Владимир АлексеевичThe Raman spectroscopy method was used to study the radiation damage and associated internal mechanical stresses in polycrystalline silicon nitride (Si3N4) irradiated with swift heavy 167 MeV Xe and 710 MeV Bi ions. The cross-section and near surface spectra of the irradiated region were registered at room temperature. FWHM parameters - 204 cm−1 and peak position - 862 cm−1 were used to characterize the amorphization and the mechanical stress level.
- ПубликацияОткрытый доступИССЛЕДОВАНИЕ ПОВРЕЖДЕНИЙ В МОНОКРИСТАЛЛАХ Y3Fe5O12, ОБЛУЧЕННЫХ БЫСТРЫМИ ТЯЖЕЛЫМИ ИОНАМИ, МЕТОДОМ РАМАНОВСКОЙ СПЕКТРОСКОПИИ(НИЯУ МИФИ, 2019) Мутали, А. К.; Сайфулин, М. М.; Скуратов, В. А.; Янсе ван Вуурен, А.; О’Коннелл, Ж. Г.; Скуратов, Владимир АлексеевичThe Raman spectroscopy method was used to study the radiation damage formed along the path of swift heavy ions in a yttrium iron garnet (Y3Fe5O12, YIG). YIG single crystals have been irradiated with swift Xe and Bi ions with energies of 167 and 715 MeV, respectively. Irradiation was carried out at room temperature in the range of fluences from 1011 to 1013 ions /cm2. The results obtained in this work is compared with previously obtained direct data (transmission electron microscopy) and indirect methods (Rutherford backscattering spectroscopy, X-ray diffraction).
- ПубликацияОткрытый доступMODIFICATION OF SURFACES AND INTERFACES WITH SWIFT HEAVY IONS(НИЯУ МИФИ, 2023) Rymzhanov, R. A.; O’Connell, J. H.; Medvedev, N.; Ćosić, M.; Skuratov, V. A.; Janse van Vuuren, A.; Volkov, A. E.; Скуратов, Владимир АлексеевичSwift heavy ions (SHI) penetrating through a solid lose main part of the energy to the electronic stopping. The extremely high level of the electronic excitation generated by incoming ion at the femtosecond scale is followed by relaxation of the perturbed electron ensemble. Subsequently, the acceleration of target atoms occurs at sub-picosecond times, resulting in the formation of a nanometric damaged region within hundreds of picoseconds after the ion passage. These structural changes can affect its physical, chemical, and mechanical properties of the irradiated target. Due to these features, accelerated ion beams serve as a versatile tool for the patterning and modification of nanometric materials [1,2], as well as the investigation of radiation stability against cosmic rays and fission fragments.
- ПубликацияОткрытый доступTEM STUDY OF Y-Ti-O AND Y-Al-O IN ODS ALLOYS IRRADIATED WITH SWIFT HEAVY IONS(НИЯУ МИФИ, 2021) Korneeva, Е. А.; Ibrayeva, A.; O’Connell, J.; Mutali, A.; Sohatsky, A. S.; Vershinina, T. N.; Skuratov, V. A.; Zdorovets, М.; Alekseeva, L. S.; Nokhrin, A. V.; Скуратов, Владимир АлексеевичIn recent years, nuclear industry development must be response to new requirements of safety, sustainability and effectiveness. The operating conditions of nuclear reactors of new design would tend to more damage operation mode, in particular, high temperature and high dozes. Oxide dispersion strengthened (ODS) alloys now have been widely investigated as perspective constructive materials for fuel claddings in Generation IV nuclear reactors due to their high values of high temperature creep resistance and resistance to irradiation swelling [1- 3]. High operation properties of ODS alloys are due to nanosized dielectric particles based mainly on yttrium oxides embedded in the metallic matrix. These thermostable nanosized particles are responsible for resistance to dislocation motion that regulate high-temperature creep resistance and tensile properties at high temperatures as well as provide swelling resistance while acting as sinks for radiation defects. Nowadays most literature data are devoted to study structure stability of ODS alloys under neutron and low-energy ion irradiation that didn’t show any significant effect on the ODS structure [4,5]. At the same time apart from neutron irradiation cladding materials in reactor core will contact with fission fragments (FF) that can dramatically affect the structure of dielectric materials even down to complete amorphization due to high levels of electronic excitation [6]. Therefore, studying the structure behavior of oxide nanoparticles in metallic matrix under FF impact can broaden the idea of operational limits and conditions of ODS steels for new reactors. The aim of present study is the complex investigation of radiation stability of nanostructured Y-Ti-O and Y-Al-O compounds embedded in metallic matrix and as separate oxides at a broad range of electronic stopping power and ion fluences.
- ПубликацияОткрытый доступEffect of swift heavy ion irradiation in the migration behavior of Xe implanted into TiN(2019) Vasco, H. A.; Hlatshwayo, T. T.; Motloung, S. V.; Mlambo, M.; Skuratov, V.; Скуратов, Владимир Алексеевич© 2019 Elsevier Ltd Sintered TiN were implanted with Xe ions of 360 keV to a fluence of 1.1 × 10 16 cm −2 at room temperature (RT) and others were co-irradiated with Xe ions of 167 MeV to a fluence of 3.4 × 10 14 cm −2 and Xe ions of 360 keV to a fluence of 1.1 × 10 16 cm −2 also at RT, successively. Both samples were isochronally annealed at temperatures ranging from 1100 to 1500 °C. Both irradiations caused no amorphization of the sintered TiN, however more defects were retained in the samples implanted with only Xe (360 keV) ions. Annealing of defects retained after irradiations were found to be faster in the co-irradiated samples. The migration behavior of implanted Xe was explained by trapping and de-trapping by defects at temperatures below 1200 °C while at temperatures above 1200 °C, it was dominated by grain boundary diffusion, in the un-irradiated samples. In the co-irradiated samples, Xe migrated via fast grain boundaries.
- ПубликацияОткрытый доступZn ION IMPLANTED Si MODIFICATION BY SWIFT Xe ION IRRADIATION(НИЯУ МИФИ, 2017) Privezentsev, V. V.; Skuratov, V. A.; Kulikauskas, V. S.; Makunin, A. V.; Ksenich, S. V.; Steinman, E. A.; Tereshchenko, A. N.; Скуратов, Владимир АлексеевичThe properties of metal nanoparticles (NPs) are comprehensively investigated because of its possible application in modern opto/microelectronic devices. Metal zinc NPs can be use in UV photo-detectors based on surface plasmon resonance phenomena [1]. There are a number of publications attempted to the formation of metal NPs by supersaturation of silicon with these metals. Among them there are works connected with formation of Zn NPs in Si ion implantation [2-4]. In recent years, there were much attention has been paid to the problems of creating combined microelectronics and photonics systems on silicon substrate. So silicon is non-direct semiconductor, it is not a convenient material for these purposes. The important task is the search for ways to synthesize NPs with a narrow size distribution. Swift heavy ion irradiation (SHI) beams allows selectivity to control the dimensions of formed NPs [5]. As known SHI irradiation lead to formation of so-called latent tracks (nanometer-sized disordered regions around ion trajectory) in many oxide crystals and corresponding track-associated radiation damage may induce the change of NP form from spherical to ellipsoidal. This effect is most noticeable for multiple (about 100 times) SHI impacts [6]. In this work the Zn nanoparticles were synthesized in Si by high-dose and low-energy Zn ion implantation. Then there was carried out the modification of implanted samples by high-energy Xe ion irradiation.
- ПубликацияОткрытый доступIrradiation effects of swift heavy ions on palladium films deposited on 6H-SiC substrate(2019) Thabethe, T. T.; Nstoane, T.; Biira, S.; Njoroge, E. G.; Skuratov, V. A.; Скуратов, Владимир Алексеевич© 2019 Elsevier B.V. The irradiation effect of swift heavy ions on palladium (Pd) films deposited on 6H-SiC was investigated. The samples were irradiated by Xe26+ ions with the energy of 167 MeV at fluences of 1 × 1013 cm−2 and 3 × 1014 cm−2 at room temperature. Phase identification, residual stress and surface morphology were investigated with X-ray diffraction (XRD) and scanning electron microscopy (SEM). The XRD results showed that the as-deposited sample was composed of Pd and SiC with no evidence of a reaction between Pd and SiC. No reaction was observed for the lower irradiation fluence, only an increase in the Pd peak intensities was observed indicating improvement in the crystallinity of the material. A reaction between Pd and SiC forming PdSi and Pd2Si was observed after irradiation at a fluence of 3 × 1014 cm−2. The stress measurements indicated that the films were having tensile and biaxial stress not exceeding 200 MPa. A decrease in stress values was observed with an increase in irradiation fluence. The surface morphology of the as-deposited was flat and composed of small granules. There was an increase in granule sizes due to irradiation at 1 × 1013 cm−2. Irradiating at 3 × 1014 cm−2 caused grain agglomeration and clustering.
- ПубликацияОткрытый доступInfrared spectroscopy of ion tracks in amorphous SiO2 and comparison to gamma irradiation induced changes(2019) Karlusic, M.; Skrabic, M.; Majer, M.; Buljan, M.; Skuratov, V. A.; Скуратов, Владимир Алексеевич© 2018 Elsevier B.V. Ion track formation in amorphous SiO2 was investigated using infrared spectroscopy. For comparison, one set of samples was also irradiated using 1.25 MeV gamma rays. An increase of 1044 cm−1 peak and decrease of 1078 cm−1 peak was observed in all cases. Experimental results were analysed using an analytical thermal spike model and non-standard model parameters were found. This finding is attributed to the amorphous structure of the material.
- ПубликацияОткрытый доступEnergy dependent structure of Xe ion tracks in YBCO and the effect on the superconductive properties in magnetic fields(2019) Suvorova, E. I.; Degtyarenko, P. N.; Karateev, I. A.; Ovcharov, A. V.; Skuratov, V. A.; Скуратов, Владимир Алексеевич© 2019 Author(s).The morphology and structure of damaged regions (tracks) produced by swift heavy 167, 77, and 46 MeV 132Xe23+ ions in YBCO-based second generation industrial high temperature superconductors wires (2G HTS) were studied using transmission electron microscopy. It was shown that ions produce tracks aligned along the ion trajectory but of morphology depending on their energy: continuous, nearly continuous, or discontinuous tracks like prolate ellipsoids of 10-15 nm in length and spheroids of 5 nm in diameter. The damaged regions of about 5 nm in diameter contain an amorphous material with a lower density compared to the pristine YBCO. The material density drops from 6300 kg m-3 for YBCO matrix to 3600 kg m-3 inside the tracks. Barium enrichment was found in the vicinity of the track at a distance of about 10 nm from the center of the defect. Ion damage tracks with different morphologies showed different effectivenesses as pinning centers. Tracks composed of discontinuous pinning centers - spheroids of about 5 nm in diameter - bring the best enhancement of the critical current density. It occurs for the lowest ion energy (46 MeV) in the range of energy loss of 8.9 keV/nm-4.7 keV/nm for Xe ions. The samples showed highest critical current densities of 56 MA/cm2 (4.2 K) and 3 MA/cm2 (77 K) in self-field, while in magnetic fields of 8 T, the values of 17 MA/cm2 (4.2 K) and 1.6 MA/cm2 (77 K) were achieved. The reduction of the superconducting volume corresponding to the amorphous radiation defects did not exceed 4% from the total sample volume.