Персона: Васильевский, Иван Сергеевич
Загружается...
Email Address
Birth Date
Научные группы
Научная группа
Организационные подразделения
Организационная единица
Институт нанотехнологий в электронике, спинтронике и фотонике
Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе.
Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.
Статус
Фамилия
Васильевский
Имя
Иван Сергеевич
Имя
5 results
Результаты поиска
Теперь показываю 1 - 5 из 5
- ПубликацияТолько метаданныеTerahertz photoconductive antenna with embedded electrodes: Simulation and experiment(2020) Khartaeva, E.; Nomoev, S.; Vasilevskii, I.; Klochkov, A.; Vinichenko, A.; Номоев, Сергей Андреевич; Васильевский, Иван Сергеевич; Клочков, Алексей Николаевич; Виниченко, Александр Николаевич© Published under licence by IOP Publishing Ltd.The paper presents the results of numerical simulation of a terahertz (THz) photoconductive antenna with embedded electrodes by the finite element method. The simulation results indicate the fact that the proposed THz antenna has a higher photocurrent than the conventional photoconductive antenna with conventional electrode contacts. Higher THz power can potentially be obtained using the proposed photoconductive antenna with embedded electrodes. The simulation results show that the electric field strength at the surface is higher for conventional PCA, however, the PCA depth with embedded contacts has a higher electric field strength. The simulation results show that the increase in the photocurrent is directly proportional to the thickness of the embedded contacts. The results of the performed experiments are consistent with the conclusions of the simulation.
- ПубликацияТолько метаданныеA visible light scattering study of silicon nanoparticles created in various ways(2020) Adam, P. M.; Bardakhanov, S.; Movsesyan, A.; Khartaeva, E.; Nomoev, S.; Vasilevskii, I.; Номоев, Сергей Андреевич; Васильевский, Иван Сергеевич© 2020 Author(s).The experiments showed the strong dependence of forward and backward scattering of light in the visible region of the spectrum by silicon nanoparticles on the method of their preparation. Silicon nanoparticles are created in two ways: by laser ablation and by the action of a relativistic electron beam. The backscattering spectra from the obtained silicon nanoparticles were measured. Raman light scattering is much more intense for silicon nanoparticles obtained by an electron beam as compared to those created by laser radiation and from single-crystal silicon. These properties of silicon nanoparticles should be taken into account when creating nanoantennas, metamaterials, and other nanophotonic devices with low dissipative losses and reflection.
- ПубликацияТолько метаданныеThe research for approaches to increase power of the compact thz emitters based on low-temperature gallium arsenide heterostructures(2020) Nomoev, S.; Vasilevskii, I.; Vinichenko, A.; Номоев, Сергей Андреевич; Васильевский, Иван Сергеевич; Виниченко, Александр Николаевич© 2020 Trans Tech Publications Ltd, SwitzerlandThe design and technological conditions for the manufacture of photoconductive antennas based on low-temperature gallium arsenide (LT-GaAs) have been developed. The optimized photoconductive THz antenna is made based on LT-GaAs with the flag geometry of the contacts and with the interdigitated structure including metal closing through the dielectric of each second period. LT-GaAs samples were obtained by molecular beam epitaxy at temperatures of 210 ̊C, 230 ̊C, 240 ̊C on GaAs substrates (100). Dark and photocurrent were measured depending on the bias voltage of the LT-GaAs heterostructure at the EP6 probe station. Full wave finite element method solver has been used to investigate the proposed plasmon PCA electrical and optical behavior by combining the Maxwell's wave equation with the drift-diffusion/Poisson equations.
- ПубликацияТолько метаданныеComputational modeling of THz photoconductive antenna with plasmonic gold nanorod(2023) Nomoev, S.; Vasilevskii, I.; Khartaeva, E.; Номоев, Сергей Андреевич; Васильевский, Иван СергеевичViews Icon Views Article contents Figures and tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Sergey Nomoev, Ivan Vasilevskii, Erzhena Khartaeva; Computational modeling of THz photoconductive antenna with plasmonic gold nanorod. AIP Conference Proceedings 16 February 2023; 2504 (1): 030041. https://doi.org/10.1063/5.0132407 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioAIP Conference Proceedings Search Advanced Search |Citation Search
- ПубликацияТолько метаданныеPlasmonic-Metal Nanostructures-Enhanced Photoconductive Terahertz Emission and Detection(2024) Nomoev, S.; Vasilevskii, I.; Klochkov, A.; Vinichenko, A.; Номоев, Сергей Андреевич; Васильевский, Иван Сергеевич; Клочков, Алексей Николаевич; Виниченко, Александр Николаевич