2019, Fominski, V. Y., Romanov, R. I., Nevolin, V. N., Fominski, D. V., Komleva, O. V., Popov, V. V., Фоминский, Вячеслав Юрьевич, Романов, Роман Иванович, Неволин, Владимир Николаевич, Фоминский, Дмитрий Вячеславович, Попов, Виктор Владимирович

© Published under licence by IOP Publishing Ltd.A comparative analysis of the abilities of several novel methods to produce ultrathin molybdenum disulphide (MoS2) films containing from 1 to 10 molecular layers was carried out. To deposit MoSx films and MoOx precursor films, the atomic flux was formed by laser ablation of Mo, MoS2, and MoO3 targets. Saturation with sulphur of the deposited layers was performed using a reactive gas (hydrogen sulphide) or by thermally activated treatment of thin-film precursors in a sulphur vapor. It has been established that the use of hydrogen sulphide makes it possible to obtain ultrathin MoS2 films at relatively low temperatures ∼ 350 C. However, these films contained local defects which were absent in the films prepared by the treatment of thin film MoOx precursors in sulphur vapours at higher temperatures (≥ 650C).