Персона: Фроня, Анастасия Андреевна
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EXPERIMENTAL INVESTIGATION OF THE EFFECT OF UVA RADIATION ON THE CORONAVIRUS INFECTIVE PROPERTIES
2021, Guschin, V. A., Nikiforova, M. A., Siniavin, A. E., Russu, L. I., Zavestovskaya, I. N., Fronya, A. A., Grigoryeva, M. S., Завестовская, Ирина Николаевна, Фроня, Анастасия Андреевна, Григорьева, Мария Сергеевна
© 2021, Allerton Press, Inc.Abstract: The results of experimental studies of the effect of ultraviolet radiation in the UVA wavelength range safe for humans on the β-coronavirus infective properties are presented. Bovine coronavirus not pathogenic for humans is selected as a prototype of the COVID-19 (SARS-CoV-2) pathogenic agent. LEDs with wavelengths of 371 nm and 401 nm are used as a radiation source. It is shown that a dose-dependent decrease in the virus infectious titer is observed for both UVA wavelengths.
VIII International Youth Scientific School-Conference "modern Problems of Physics and Technology" (MPPT2019): Preface
2020, Krokhin, O. N., Zavestovskaya, I. N., Yashin, I. I., Fronya, A. A., Завестовская, Ирина Николаевна, Яшин, Игорь Иванович, Фроня, Анастасия Андреевна
Inactivation of coronaviruses under irradiation by UVA-range light-emitting diodes
2022, Gushchin, V. A., Russu, L. I., Cheshev, E. A., Koromyslov, A. L., Zavestovskaya, I. N., Fronya, A. A., Grigor'eva, M. S., Завестовская, Ирина Николаевна, Фроня, Анастасия Андреевна, Григорьева, Мария Сергеевна
© 2022 Kvantovaya Elektronika and IOP Publishing Limited.We report the results of the development of an experimental stand based on UVA light-emitting diodes (UVA LEDs) with radiation wavelengths of 385 and 395 nm for studying experimentally the inactivation of viruses of the coronavirus family, including SARS-CoV-2. Methodological grounds are presented for determining the inactivation dose that provides a predetermined decrease in the virus titre under the impact of UVA radiation. The effect of the diode radiation divergence on the virus photoinactivation process is investigated. It is shown that UVA LEDs can be used to reduce the virus titre by 4 orders of magnitude.
Study of the Dynamics of Dissolution and Laser Heating of Germanium Nanoparticles
2024, Fronya, A. A., Donchenko, D. V., Mavreshko, E. I., Grigorieva, M. S., Zavestovskaya, I. N., Фроня, Анастасия Андреевна, Маврешко, Егор Игоревич, Григорьева, Мария Сергеевна, Завестовская, Ирина Николаевна
Prospects for the Use of Bismuth Nanoparticles and Its Compounds in Biomedicine
2023, Rudyy, A. V., Fronya, A. A., Zavestovskaya, I. N., Фроня, Анастасия Андреевна, Завестовская, Ирина Николаевна
Modeling of Short-Pulse Laser Interactions with Monolithic and Porous Silicon Targets with an Atomistic–Continuum Approach
2023, Grigoryeva, M. S., Kutlubulatova, I. A., Lukashenko, S. Yu., Fronya, A. A., Zavestovskaya, I. N., Кутлубулатова, Ирина Александровна, Фроня, Анастасия Андреевна, Завестовская, Ирина Николаевна
The acquisition of reliable knowledge about the mechanism of short laser pulse interactions with semiconductor materials is an important step for high-tech technologies towards the development of new electronic devices, the functionalization of material surfaces with predesigned optical properties, and the manufacturing of nanorobots (such as nanoparticles) for bio-medical applications. The laser-induced nanostructuring of semiconductors, however, is a complex phenomenon with several interplaying processes occurring on a wide spatial and temporal scale. In this work, we apply the atomistic-continuum approach for modeling the interaction of an fs-laser pulse with a semiconductor target, using monolithic crystalline silicon (c-Si) and porous silicon (Si). This model addresses the kinetics of non-equilibrium laser-induced phase transitions with atomic resolution via molecular dynamics, whereas the effect of the laser-generated free carriers (electron-hole pairs) is accounted for via the dynamics of their density and temperature. The combined model was applied to study the microscopic mechanism of phase transitions during the laser-induced melting and ablation of monolithic crystalline (c-Si) and porous Si targets in a vacuum. The melting thresholds for the monolithic and porous targets were found to be 0.32 J/cm2 and 0.29 J/cm2, respectively. The limited heat conduction mechanism and the absence of internal stress accumulation were found to be involved in the processes responsible for the lowering of the melting threshold in the porous target. The results of this modeling were validated by comparing the melting thresholds obtained in the simulations to the experimental values. A difference in the mechanisms of ablation of the c-Si and porous Si targets was considered. Based on the simulation results, a prediction regarding the mechanism of the laser-assisted production of Si nanoparticles with the desired properties is drawn.