Персона: Чубунова, Елена Витальевна
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Институт лазерных и плазменных технологий
Стратегическая цель Института ЛаПлаз – стать ведущей научной школой и ядром развития инноваций по лазерным, плазменным, радиационным и ускорительным технологиям, с уникальными образовательными программами, востребованными на российском и мировом рынке образовательных услуг.
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Елена Витальевна
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- ПубликацияТолько метаданныеA Unique System for Registering One-Photon Signals in the Ultraviolet Range from An Isomeric 229mTh Nucleus Implanted on Thin SiO2/Si Films(2020) Lebedinskii, Y. Y.; Borisyuk, P. V.; Chubunova, E. V.; Kolachevsky, N. N.; Vasiliev, O. S.; Tkalya, E. V.; Лебединский, Юрий Юрьевич; Борисюк, Петр Викторович; Чубунова, Елена Витальевна; Васильев, Олег Станиславович; Ткаля, Евгений Викторович© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimCurrently, an urgent task related to creating a nuclear frequency standard is the identification of a low-lying nuclear state in the thorium-229 isotope. Herein, a method for measuring the single-photon energy during the decay of an isomeric thorium-229 nucleus implanted in a wide-gap dielectric SiO2 (Eg = 9 eV) is developed. The proposed method utilizes thin silicon oxide layers obtained by thermal oxidization of the pure silica wafers, which allows measurement of the energy of photons in the ultraviolet (UV) range using an electronic spectrometer. The modeling study of electronic state excitation is provided via UV radiation from Kr, Xe, and D resonance discharging lamps. The obtained spectra are analyzed, and a method for determining the UV photon's energy is proposed.
- ПубликацияТолько метаданныеLocal Electrochemical Deposition of Nuclear Materials as a Method for Creating Miniature Solid-State Targets for Precision Measurements(2020) Karpov, G. A.; Yarotskaya, L. V.; Borisyuk, P. V.; Vasilyev, O. S.; Efimov, V. G.; Lebedinsky, Y. Y.; Chubunova, E. V.; Борисюк, Петр Викторович; Васильев, Олег Станиславович; Лебединский, Юрий Юрьевич; Чубунова, Елена Витальевна© 2020, Pleiades Publishing, Ltd.Abstract: The results of a study of the local formation of thorium oxide-based coatings on the SiO2/Si (111) surface during electrochemical deposition are presented. It was experimentally found that as a result of electrochemical deposition of thorium atoms from an acetone solution of Th(NO3)4 with the presence of water on the silicon surface, local formation of thorium compounds occurs. The results of the analysis of the chemical composition of the surface by the method of local XPS analysis show that these compounds are those based on thorium, silicon, oxygen, and carbon. After annealing for 6 h at 600°C in atmosphere, carbon completely disappears, and the formed cluster film seemingly consists only of thorium and oxygen. It is shown that this system is promising for future research on nuclear low-lying isomeric transition in the 229Th isotope under electron beam irradiation.
- ПубликацияТолько метаданныеThSi10O22 Compound as Target for Production of Isomeric Thorium-229 Nuclei at Electron Beam Irradiation(2020) Borisyuk, P. V.; Chubunova, E. V.; Lebedinskii, Y. Y.; Vasilyev, O. S.; Yakovlev, V. P.; Борисюк, Петр Викторович; Чубунова, Елена Витальевна; Лебединский, Юрий Юрьевич; Васильев, Олег Станиславович; Яковлев, Валерий Петрович© 2020, Pleiades Publishing, Ltd.Abstract: A method for excitation of thorium-229 isomeric nuclei the electron beam irradiation of a solid-state target based on thorium silicate is considered. The key point for obtaining an effective yield of isomeric nuclei is the generation of secondary electrons with a significant increase in the multiplication factor for electrons that have energies within a range from 1 to 25 keV. Based on numerical simulation and theoretical estimation of the excitation cross section of isomeric transition in inelastic scattering, the yield function of isomeric nuclei was o qualitatively obtained.
- ПубликацияТолько метаданныеAutoelectronic emission and charge relaxation of thorium ions implanted into a thin-film silicon oxide matrix(2021) Borisyuk, P. V.; Chubunova, E. V.; Kolachevsky, N. N.; Lebedinskii, Y. Y.; Tkalya, E. V.; Vasilyev, O. S.; Yakovlev, V. P.; Борисюк, Петр Викторович; Чубунова, Елена Витальевна; Лебединский, Юрий Юрьевич; Ткаля, Евгений Викторович; Васильев, Олег Станиславович; Яковлев, Валерий ПетровичAn ensemble of thorium-229 ions embedded by pulsed laser implantation into a matrix of a broadband dielectric-silicon oxide is studied. The results of the experimental investigation of thorium ions' lifetime as charged components of the Th+/SiO2/Si system formed immediately after laser implantation are presented. The modelled theoretical description takes into account the instantaneous charging of the surface via laser implantation followed by charge relaxation due to the effect of autoelectronic emission that leads to time dependent partial neutralization of the surface charge by tunneling electrons. It was found that the lifetime of Th+ ions on the SiO2 surface can exceed 10 s, which would be an attractive opportunity for studying the nuclear low-lying isomeric transition in the thorium-229 isotope.