2014_Конференция "Взаимодействие плазмы с поверхностью" (XVII; Москва, 30-31 января 2014 г.)

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Просмотр 2014_Конференция "Взаимодействие плазмы с поверхностью" (XVII; Москва, 30-31 января 2014 г.) по Автор "GRZONKA, J."

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    PRODUCTION AND RECOVERY OF RADIATION-INDUCED DE-FECTS IN TUNGSTEN
    (НИЯУ МИФИ, 2014) OGORODNIKOVA, O. V.; SUGIYAMA, K.; CIUPIŃSKI, Ł.; GRZONKA, J.; GASPARYAN, Yu.; EFIMOV, V.; Гаспарян, Юрий Микаэлович; Огородникова, Ольга Вячеславовна; Ефимов, Виталий Сергеевич
    Accumulation and recovery of radiation defects under/after self-ion irradia-tion in tungsten (W) have been investigated via decoration with deuterium (D) and scanning transmission electron microscopy. The deuterium was incorpo-rated in damaged material by low-energy D plasma. The D retention at radia-tion-induced defects in each sample was subsequently measured by nuclear reaction analysis allowing determination of the D concentration at depths up to 6 μm. The total D retention was measured by thermal desorption spectroscopy. It was shown that pre-irradiation with self-ions led to rather high D retention (≥ 0.1 at.%) in W even at high temperatures (≥ 700 K) due to formation of defects with high de-trapping energy for deuterium. The annealing of defects with low trapping energy for D occurs intensively in the temperature range between 300 and 700 K. The radiation-induced defects with high de-trapping energy for D are thermally stable at least up to 1100 K. Moreover, the clear evidence of an increase of the D retention at radiation-induced defects in polycrystalline W at annealing temperature of around 1000 K was found. This observation suggested that 1000 K can be maximum temperature of agglomeration of vacancy clusters in nano- or micro-voids. This conclusion was supported by scanning transmis-sion electron microscopy data which showed a coalescence of small clusters in big ones after annealing. The increase of the D retention at annealing tempera-ture of ~1000 K was not observed for recrystallized W. The mechanism of re-covery of radiation-induced defects depending on the grain size and impurities is discussed.