Publication: Determination of the Free Charge Carrier Concentration in Boron-Doped Silicon Nanowires Using Attenuated Total Reflection Infrared Spectroscopy
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2019
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© 2019, Pleiades Publishing, Ltd.Abstract: Attenuated total reflection infrared spectroscopy is used to determine the free charge carrier concentration in arrays of silicon nanowires with characteristic transverse sizes of 50–100 nm and a length of the order of 10 μm formed on lightly doped crystalline p-type silicon by metal-assisted chemical etching and subjected to the additional thermal-diffusion doping of boron at temperatures of 850–1000°C. It is found that the free hole concentration in arrays varies from 5 × 1018 to 3 × 1019 cm–3 depending on the annealing temperature and is maximal at temperatures of 900–950°C. These results can be used to extend the range of potential application of silicon nanowires in photonics, sensorics, and thermoelectric power converters.
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Determination of the Free Charge Carrier Concentration in Boron-Doped Silicon Nanowires Using Attenuated Total Reflection Infrared Spectroscopy / Lipkova, E.A. [et al.] // Semiconductors. - 2019. - 53. - № 11. - P. 1524-1528. - 10.1134/S1063782619110113
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https://www.doi.org/10.1134/S1063782619110113
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https://openrepository.mephi.ru/handle/123456789/18864
https://www.scopus.com/record/display.uri?eid=2-s2.0-85074811728&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000494828000017
https://openrepository.mephi.ru/handle/123456789/18864