Publication:
New Structure for Photoconductive Antennas Based on {LTG-GaAs/GaAs:Si} Superlattice on GaAs(111) A Substrate

Простая страница элемента
dc.contributor.authorGaliev, G. B.
dc.contributor.authorTrunkin, I. N.
dc.contributor.authorVasiliev, A. L.
dc.contributor.authorKlimov, E. A.
dc.contributor.authorVasil'evskii, I. S.
dc.contributor.authorVinichenko, A. N.
dc.contributor.authorВасильевский, Иван Сергеевич
dc.contributor.authorВиниченко, Александр Николаевич
dc.date.accessioned2024-11-21T08:52:31Z
dc.date.available2024-11-21T08:52:31Z
dc.date.issued2019
dc.description.abstract© 2019, Pleiades Publishing, Inc.Abstract: The structural characteristics of a new structure for photoconductive antennas have been investigated. This structure is a multilayered epitaxial film grown on a GaAs(111)A substrate; it consists of alternating undoped low-temperature grown GaAs (LTG-GaAs) layers and GaAs layers synthesized in the standard high-temperature regime and doped with silicon (GaAs:Si). The As4/Ga flow ratio γ is chosen such as to produce p-type GaAs:Si layers. LTG-GaAs layers were grown at an enlarged γ value. The samples grown on GaAs(100) substrates were single-crystal, whereas the single-crystal growth on GaAs(111)A substrates changed to polycrystalline when the film thickness reached 320–340 nm. The sizes of As precipitates in annealed samples, their distribution over the film thickness, and specific features of their crystal structure have been analyzed.
dc.format.extentС. 205-211
dc.identifier.citationNew Structure for Photoconductive Antennas Based on {LTG-GaAs/GaAs:Si} Superlattice on GaAs(111) A Substrate / Galiev, G.B. [et al.] // Crystallography Reports. - 2019. - 64. - № 2. - P. 205-211. - 10.1134/S1063774519020111
dc.identifier.doi10.1134/S1063774519020111
dc.identifier.urihttps://www.doi.org/10.1134/S1063774519020111
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85066135015&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000468947500003
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/18086
dc.relation.ispartofCrystallography Reports
dc.titleNew Structure for Photoconductive Antennas Based on {LTG-GaAs/GaAs:Si} Superlattice on GaAs(111) A Substrate
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue2
oaire.citation.volume64
relation.isAuthorOfPublication8ce84220-3c34-4278-83e7-c79be7660fe9
relation.isAuthorOfPublication635fa0fa-6e40-44e3-ba36-c309ec64c497
relation.isAuthorOfPublication.latestForDiscovery8ce84220-3c34-4278-83e7-c79be7660fe9
relation.isOrgUnitOfPublication06e1796d-4f55-4057-8d7e-bb2f3b5676f5
relation.isOrgUnitOfPublication.latestForDiscovery06e1796d-4f55-4057-8d7e-bb2f3b5676f5
Файлы
Коллекции
Публикации