Publication:
Effects of Ag and Sr dual ions implanted into SiC

Файлы
W3015325794.pdf(4.07 MB)
Дата
2020
Авторы
Hlatshwayo, T. T.
Mtshonisi, N.
Njoroge, E. G.
Mlambo, M.
Skuratov, V. A.
Journal Title
Journal ISSN
Volume Title
Издатель
Научные группы
Организационные подразделения
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Организационная единица
Институт ядерной физики и технологий
Цель ИЯФиТ и стратегия развития - создание и развитие научно-образовательного центра мирового уровня в области ядерной физики и технологий, радиационного материаловедения, физики элементарных частиц, астрофизики и космофизики.
Выпуск журнала
Аннотация
© 2020 Elsevier B.V.The effect of silver (Ag) and strontium (Sr) ions implanted into polycrystalline (SiC) was investigated. One batch of polycrystalline SiC wafers was implanted with 360 keV silver ions (Ag-SiC) and another implanted with 360 keV strontium ions (Sr-SiC). Both implantations were performed at 600 °C to a fluence of 2 × 1016 cm−2. Some of the Ag- SiC samples were then implanted with Sr ions of 280 keV to a fluence of 2 × 1016 cm−2 at 600 °C (Ag&Sr-SiC). The as-implanted samples were annealed at temperatures from 1000 to 1400 °C in steps of 100 °C for 5 h. The samples were thereafter characterised by Transmission electron microscopy (TEM), Raman spectroscopy, Elastic Recoil Detection Analysis (ERDA), Rutherford backscattering spectrometry (RBS), and Scanning electron microscopy (SEM). Both individual and dual implantations resulted in no amorphization of the SiC. As expected, dual implantation resulted in a higher defect concentration. Subsequent Sr implantation resulted in the formation of Ag precipitates, especially around grain boundaries. Annealing the Ag-SiC and Ag&Sr-SiC samples caused the shift of implants towards the surface accompanied by loss at 1400 °C while no loss was observed in the Sr-SiC samples.
Описание
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Цитирование
Effects of Ag and Sr dual ions implanted into SiC / Hlatshwayo, T.T. [et al.] // Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. - 2020. - 472. - P. 7-13. - 10.1016/j.nimb.2020.03.035
URI
https://www.doi.org/10.1016/j.nimb.2020.03.035
 https://www.scopus.com/record/display.uri?eid=2-s2.0-85082651894&origin=resultslist
 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000528192700002
 https://openrepository.mephi.ru/handle/123456789/20499
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