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The 'Extrinsic' Compact Model of the MOSFET Drain Current Based on a New Interpolation Expression for the Transition between Linear and Saturation Regimes with a Monotonic Decrease of the Differential Conductance to a Nonzero Value

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dc.contributor.authorTurin, V. O.
dc.contributor.authorShkarlat, R. S.
dc.contributor.authorIniguez, B.
dc.contributor.authorShur, M. S.
dc.contributor.authorZebrev, G. I.
dc.contributor.authorЗебрев, Геннадий Иванович
dc.date.accessioned2024-11-27T08:19:45Z
dc.date.available2024-11-27T08:19:45Z
dc.date.issued2020
dc.description.abstract© 2020 IEEE.Previously, we proposed a new interpolation expression to bridge the transition between the linear and the saturation regimes of 'intrinsic' MOSFET. This approach, in contrast to the traditional one, gives a monotonic decrease of the differential conductance from the maximum value in the linear regime to the minimum value in the saturation regime. Later, we proposed a linear approximation for an 'extrinsic' MOSFET drain current dependence on the 'extrinsic' drain bias in the saturation regime for not very high drain bias when nonlinear effects can be neglected. To obtain this approximation, an equation for the output differential resistance of the 'extrinsic' MOSFET in saturation regime was obtained, that is similar to the result known from the theory of the common source MOSFET amplifier with source degeneration. In this paper, we combine these two results and present an 'extrinsic' compact model for a short-channel MOSFET above threshold drain current with proper account of the differential conductance in the saturation regime.
dc.identifier.citationThe 'Extrinsic' Compact Model of the MOSFET Drain Current Based on a New Interpolation Expression for the Transition between Linear and Saturation Regimes with a Monotonic Decrease of the Differential Conductance to a Nonzero Value / Turin, V.O. [et al.] // 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings. - 2020. - 10.1109/EDTM47692.2020.9117810
dc.identifier.doi10.1109/EDTM47692.2020.9117810
dc.identifier.urihttps://www.doi.org/10.1109/EDTM47692.2020.9117810
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85091993720&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000610825100008
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/22416
dc.relation.ispartof4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings
dc.titleThe 'Extrinsic' Compact Model of the MOSFET Drain Current Based on a New Interpolation Expression for the Transition between Linear and Saturation Regimes with a Monotonic Decrease of the Differential Conductance to a Nonzero Value
dc.typeConference Paper
dspace.entity.typePublication
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