Publication:
Acceptor complex signatures in oxygen-rich ZnO thin films implanted with chlorine ions

Дата
2020
Авторы
Azarov, A.
Galeckas, A.
Venkatachalapathy, V.
Mei, Z. X.
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Издатель
Научные группы
Организационные подразделения
Организационная единица
Институт ядерной физики и технологий
Цель ИЯФиТ и стратегия развития - создание и развитие научно-образовательного центра мирового уровня в области ядерной физики и технологий, радиационного материаловедения, физики элементарных частиц, астрофизики и космофизики.
Выпуск журнала
Аннотация
Spectroscopic identification of defects and impurities is crucial for understanding doping asymmetry issues in ZnO and, therefore, realization of true ZnO-based bipolar devices. Chlorine (Cl) is an amphoteric impurity in ZnO exhibiting acceptor behavior in the interstitial configuration and donor action once on substitutional oxygen sites (Cl-O). In its turn, the incorporation of Cl atoms depends on the material growth conditions and a Cl-O fraction should be suppressed in O-rich materials. In the present work, Cl ions were implanted into ZnO thin films synthesized under O-rich conditions. In contrast to a negligible effect of Cl incorporation to electrical conductivity, photoluminescence measurements revealed dramatic developments of optical properties with a strong acceptor-like spectral signature emerging after 900 degrees C anneals. We discuss the origins of a new excitonic I* line (3.355 eV) induced by Cl-implantation and propose two alternative defect models based on shallow acceptor and shallow donor complexes. Published under license by AIP Publishing.
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Цитирование
Acceptor complex signatures in oxygen-rich ZnO thin films implanted with chlorine ions / Azarov, A [et al.] // Journal of Applied Physics. - 2020. - 128. - № 12. - 10.1063/5.0021089
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