Publication: Acceptor complex signatures in oxygen-rich ZnO thin films implanted with chlorine ions
Дата
2020
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Spectroscopic identification of defects and impurities is crucial for understanding doping asymmetry issues in ZnO and, therefore, realization of true ZnO-based bipolar devices. Chlorine (Cl) is an amphoteric impurity in ZnO exhibiting acceptor behavior in the interstitial configuration and donor action once on substitutional oxygen sites (Cl-O). In its turn, the incorporation of Cl atoms depends on the material growth conditions and a Cl-O fraction should be suppressed in O-rich materials. In the present work, Cl ions were implanted into ZnO thin films synthesized under O-rich conditions. In contrast to a negligible effect of Cl incorporation to electrical conductivity, photoluminescence measurements revealed dramatic developments of optical properties with a strong acceptor-like spectral signature emerging after 900 degrees C anneals. We discuss the origins of a new excitonic I* line (3.355 eV) induced by Cl-implantation and propose two alternative defect models based on shallow acceptor and shallow donor complexes. Published under license by AIP Publishing.
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Acceptor complex signatures in oxygen-rich ZnO thin films implanted with chlorine ions / Azarov, A [et al.] // Journal of Applied Physics. - 2020. - 128. - № 12. - 10.1063/5.0021089
URI
https://www.doi.org/10.1063/5.0021089
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https://www.scopus.com/record/display.uri?eid=2-s2.0-85092428505&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000575149800001
https://openrepository.mephi.ru/handle/123456789/22443