Publication: INFLUENCE OF LATTICE DEFORMATIONS ON THE ELECTRONIC STRUCTURE OF THE MOLYBDENUM DISULFIDE MONOLAYER
Дата
2021
Авторы
Krivosheeva, A. V.
Shaposhnikov, V. L.
Borisenko, V. E.
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The possibilities and conditions for modifying the band gap and the behavior of interband transitions under compressive and tensile strains in the crystal lattice of a molybdenum disulfide monolayer have been determined by theoretical modeling. It is shown that depending on the value and direction of the strains the compound may be a direct-gap or indirect-gap semiconductor, and the conditions for such transformations are determined. The results demonstrate a potential use of the molybdenum disulfide monolayer in nanoelectronic devices of new generation in which controlled transport of charge carriers is possible.
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INFLUENCE OF LATTICE DEFORMATIONS ON THE ELECTRONIC STRUCTURE OF THE MOLYBDENUM DISULFIDE MONOLAYER / Krivosheeva, AV, Shaposhnikov, VL, Borisenko, VE // DOKLADY NATSIONALNOI AKADEMII NAUK BELARUSI. - 2021. - 65. - № 1. - P. 40-45. - 10.29235/1561-8323-2021-65-1-40-45