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Investigating the structural changes induced by SHI on W–SiC samples

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dc.contributor.authorThabethe, T. T.
dc.contributor.authorNtsoane, T. P.
dc.contributor.authorBiira, S.
dc.contributor.authorNjoroge, E. G.
dc.contributor.authorSkuratov, V. A.
dc.contributor.authorСкуратов, Владимир Алексеевич
dc.date.accessioned2024-11-25T15:53:21Z
dc.date.available2024-11-25T15:53:21Z
dc.date.issued2020
dc.description.abstract© 2020 Elsevier LtdThe structural modification of tungsten-SiC samples irradiated with Xe26+ swift heavy ions (SHIs) was investigated. Tungsten (W) thin films were deposited on 6H–SiC using e-beam. After deposition, the W–SiC samples were irradiated by 167 MeV Xe26+ ions to fluences of 1012 cm−2, 1013 cm−2 and 1014 cm−2 at room temperature. The sample composition, phase identification, residual stress component and surface morphology were investigated with Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results indicated that the as-deposited samples were composed of W and SiC, with no reaction between them. The samples irradiated to a fluence of 1012 cm−2 showed that a reaction between W and SiC took place resulting in the formation of WSi2 and WC phases. The samples irradiated to fluences of 1013 and 1014 cm−2 showed further reactions between W and SiC with WSi2 and WC being the only phases formed. The SiC substrate had bi-axial compressive stress which did not excess 700 MPa after irradiating to the highest fluence. The W layer deposited on SiC was flat and homogeneous after deposition. A textured surface with identifiable grains was observed after the SHI irradiations.
dc.identifier.citationInvestigating the structural changes induced by SHI on W–SiC samples / Thabethe, T.T. [et al.] // Vacuum. - 2020. - 174. - 10.1016/j.vacuum.2020.109230
dc.identifier.doi10.1016/j.vacuum.2020.109230
dc.identifier.urihttps://www.doi.org/10.1016/j.vacuum.2020.109230
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85078461359&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000517661000035
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/20208
dc.relation.ispartofVacuum
dc.titleInvestigating the structural changes induced by SHI on W–SiC samples
dc.typeArticle
dspace.entity.typePublication
oaire.citation.volume174
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relation.isAuthorOfPublication.latestForDiscoverya42d0cba-a1ca-4481-b526-7b326b53db08
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