Publication: Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide
Дата
2022
Авторы
Kjeldby, S. B.
Azarov, A.
Nguyen, P. D.
Venkatachalapathy, V.
Mikšová, R.
MacKová, A.
Kuznetsov, A.
Prytz, O.
Vines, L.
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Volume Title
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Аннотация
Defect accumulation and annealing phenomena in Si-implanted monoclinic gallium oxide (β-Ga2O3) wafers, having (2¯01), (010), and (001) orientations, were studied by Rutherford backscattering spectrometry in channeling mode (RBS/c), x-ray diffraction (XRD), and (scanning) transmission electron microscopy [(S)TEM]. Initially, the samples with different surface orientations were implanted with 300 keV 28Si+-ions, applying fluences in the range of 1 × 1014–2 × 1016 Si/cm2, unveiling interesting disorder accumulation kinetics. In particular, the RBS/c, XRD, and (S)TEM combined data suggested that the radiation disorder buildup in Si-implanted β-Ga2O3 is accompanied by significant strain accumulation, assisting crystalline-to-crystalline phase transitions instead of amorphization. Selected samples having (2¯01) orientation were subjected to isochronal (30 min) anneals in the range of 300–1300 °C in air. Systematic RBS/c and XRD characterization of these samples suggested complex structural transformations, which occurred as a function of the fluence and the temperature. Moreover, a detailed (S)TEM analysis of the sample implanted with 2 × 1016 Si/cm2 and annealed at 1100 °C was enhanced by applying dispersive x-ray and electron energy-loss spectroscopies. The analysis revealed silicon agglomerations in the form of silicon dioxide particles. Signal from silicon was also detected outside of the agglomerates, likely occurring as substitutional Si on Ga sites.
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Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide / Kjeldby, S.B. [et al.] // Journal of Applied Physics. - 2022. - 131. - № 12. - 10.1063/5.0083858
URI
https://www.doi.org/10.1063/5.0083858
https://www.scopus.com/record/display.uri?eid=2-s2.0-85127357239&origin=resultslist
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https://openrepository.mephi.ru/handle/123456789/27592
https://www.scopus.com/record/display.uri?eid=2-s2.0-85127357239&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000779491400010
https://openrepository.mephi.ru/handle/123456789/27592