Publication: Thermal degradation of metamorphic HEMT InAlAs/InGaAs/InAlAs grown on GaAs substrates
Дата
2019
Авторы
Vinichenko, A. N.
Ermakov, S. S.
Kargin, N. I.
Vasil'Evskii, I. S.
Journal Title
Journal ISSN
Volume Title
Издатель
Аннотация
© Published under licence by IOP Publishing Ltd.termal annealing effect on electron transport properties of MHEMT nanostructures is studied for inhert and atmospheric conditions. Iti is revealed that surface modification is mainly responsible for changes in electron properties rather than dislocation sliding and threading into active layers.
Описание
Ключевые слова
Цитирование
Thermal degradation of metamorphic HEMT InAlAs/InGaAs/InAlAs grown on GaAs substrates / Vinichenko, A.N. [et al.] // Journal of Physics: Conference Series. - 2019. - 1238. - № 1. - 10.1088/1742-6596/1238/1/012022