Publication: High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9-2.0 μm
Дата
2021
Авторы
Svetogorov, V. N.
Ryaboshtan, Yu. L.
Volkov, N. A.
Ladugin, M. A.
Marmalyuk, A. A.
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Аннотация
© 2021 Kvantovaya Elektronika and IOP Publishing Limited.High-power semiconductor lasers based on AlGaInAs/InP heterostructures and emitting in the spectral range 1.9 - 2.0 μm are developed. Strain compensation in the active region makes it possible to use InGaAs quantum wells with a compressive strain of about 2.0% - 2.5%. The operation of a laser with an ultra-narrow waveguide at wavelengths increasing from 1.4 - 1.6 to 2.0 μm is studied. At room temperature, the semiconductor lasers with a stripe contact width of 100 μm demonstrates a cw output optical power of 1.0 W with a wavelength of 1.91 μm at a pump current of 6.5 A and with a wavelength of 1.98 μm at a pump current of 7.2 A.
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High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9-2.0 μm / Svetogorov, V.N. [et al.] // Quantum Electronics. - 2021. - 51. - № 10. - P. 909-911. - 10.1070/QEL17635
URI
https://www.doi.org/10.1070/QEL17635
https://www.scopus.com/record/display.uri?eid=2-s2.0-85117178688&origin=resultslist
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https://openrepository.mephi.ru/handle/123456789/24815
https://www.scopus.com/record/display.uri?eid=2-s2.0-85117178688&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000706856400009
https://openrepository.mephi.ru/handle/123456789/24815