Publication: Quantum Hall transitions in the presence of Landau levels mixing in n-InGaAs/InAlAs structures
Дата
2019
Авторы
Gudina, S. V.
Arapov, Y. G.
Ilchenko, E. V.
Neverov, V. N.
Vasil'Evskii, I. S.
Vinichenko, A. N.
Journal Title
Journal ISSN
Volume Title
Издатель
Аннотация
© Published under licence by IOP Publishing Ltd. We provide a systematic measurement of the longitudinal ρ xx and Hall ρ xy resistivities of quantum Hall transition in a two-dimensional electron system In 0.9 Ga 0.1 As/In 0.81 Al 0.19 As with strong spin-orbit coupling. For half-integer filling factors the linear temperature dependence of the effective quantum Hall effect plateau-to-plateau transition width ΔB(T) is observed in contrast to scaling behavior for systems with short-range disorder. The recent prediction that the width of transition region remains finite when extrapolated to zero temperature, resulting from Landau level mixing, is more preferable. The shift of the transition point in magnetic field with the temperature is found to originate from the mixing between Landau levels due to the inelastic scattering.
Описание
Ключевые слова
Цитирование
Quantum Hall transitions in the presence of Landau levels mixing in n-InGaAs/InAlAs structures / Gudina, S.V. [et al.] // IOP Conference Series: Materials Science and Engineering. - 2019. - 475. - № 1. - 10.1088/1757-899X/475/1/012029