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Infrared photoluminescence from GeO[SiO2] and GeO[SiO] solid alloy layers irradiated with swift heavy Xe ions

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dc.contributor.authorCherkova, S. G.
dc.contributor.authorVolodin, V. A.
dc.contributor.authorStoffel, M.
dc.contributor.authorRinnert, H.
dc.contributor.authorSkuratov, V. A.
dc.contributor.authorСкуратов, Владимир Алексеевич
dc.date.accessioned2024-11-25T17:21:58Z
dc.date.available2024-11-25T17:21:58Z
dc.date.issued2020
dc.description.abstract© 2020 Elsevier B.V.Germanium silicate suboxide films deposited from GeO/SiO and GeO/SiO2 precursors onto Si(001) substrates using evaporation in high vacuum were modified by swift heavy ions. The films were irradiated by 167 MeV Xe+26 ions with fluences varying from 1011 to 1013 cm−2. We report photoluminescence in the infrared range both at low and at room temperature, which is most probably due to defect-induced radiative transitions in the films.
dc.identifier.citationInfrared photoluminescence from GeO[SiO2] and GeO[SiO] solid alloy layers irradiated with swift heavy Xe ions / Cherkova, S.G. [et al.] // Journal of Luminescence. - 2020. - 223. - 10.1016/j.jlumin.2020.117238
dc.identifier.doi10.1016/j.jlumin.2020.117238
dc.identifier.urihttps://www.doi.org/10.1016/j.jlumin.2020.117238
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85082387838&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000536911800015
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/20461
dc.relation.ispartofJournal of Luminescence
dc.titleInfrared photoluminescence from GeO[SiO2] and GeO[SiO] solid alloy layers irradiated with swift heavy Xe ions
dc.typeArticle
dspace.entity.typePublication
oaire.citation.volume223
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