Publication:
Model for Thermal Oxidation of Silicon

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dc.contributor.authorFadeev, A. V.
dc.contributor.authorDevyatko, Y. N.
dc.date.accessioned2024-11-21T08:50:08Z
dc.date.available2024-11-21T08:50:08Z
dc.date.issued2019
dc.description.abstract© 2019, Pleiades Publishing, Ltd. Abstract: Nanometer-thick silicon oxide films are needed for miniaturization and increase in the working rate of electronic devices. Interpretation of the initial stages of silicon oxidation is necessary for fabrication of such structures. A theoretical model of the thermal oxidation of thin silicon monolayers that takes into account an increase in the stress in the transition (oxide–substrate) layer due to oxygen accumulation therein is proposed.
dc.format.extentС. 575-581
dc.identifier.citationFadeev, A. V. Model for Thermal Oxidation of Silicon / Fadeev, A.V., Devyatko, Y.N. // Technical Physics. - 2019. - 64. - № 4. - P. 575-581. - 10.1134/S1063784219040108
dc.identifier.doi10.1134/S1063784219040108
dc.identifier.urihttps://www.doi.org/10.1134/S1063784219040108
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85066011096&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000468111300024
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/18076
dc.relation.ispartofTechnical Physics
dc.titleModel for Thermal Oxidation of Silicon
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue4
oaire.citation.volume64
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