Publication:
Model for Thermal Oxidation of Silicon

Дата
2019
Авторы
Fadeev, A. V.
Devyatko, Y. N.
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Научные группы
Организационные подразделения
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Аннотация
© 2019, Pleiades Publishing, Ltd. Abstract: Nanometer-thick silicon oxide films are needed for miniaturization and increase in the working rate of electronic devices. Interpretation of the initial stages of silicon oxidation is necessary for fabrication of such structures. A theoretical model of the thermal oxidation of thin silicon monolayers that takes into account an increase in the stress in the transition (oxide–substrate) layer due to oxygen accumulation therein is proposed.
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Цитирование
Fadeev, A. V. Model for Thermal Oxidation of Silicon / Fadeev, A.V., Devyatko, Y.N. // Technical Physics. - 2019. - 64. - № 4. - P. 575-581. - 10.1134/S1063784219040108
URI
https://www.doi.org/10.1134/S1063784219040108
 https://www.scopus.com/record/display.uri?eid=2-s2.0-85066011096&origin=resultslist
 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000468111300024
 https://openrepository.mephi.ru/handle/123456789/18076
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