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Solid-state reactions between iridium thin films and silicon carbide in the 700 °C to 1000 °C temperature range

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dc.contributor.authorNjoroge, E.
dc.contributor.authorHlatshwayo, T.
dc.contributor.authorMokgadi, T. F.
dc.contributor.authorThabethe, T.
dc.contributor.authorSkuratov, V. A.
dc.contributor.authorСкуратов, Владимир Алексеевич
dc.date.accessioned2024-12-27T08:28:58Z
dc.date.available2024-12-27T08:28:58Z
dc.date.issued2023
dc.description.abstractThe solid-state reactions between iridium thin films (50 nm) and 6H-SiC in the 700 В°C to 1000 В°C temperature range were investigated. The microstructure and surface morphology of the Ir thin films on 6H-SiC were examined using Rutherford backscattering spectrometry (RBS), scanning electron microscopy (SEM), Raman spectroscopy and grazing incidence X-ray diffraction (GIXRD). The electron beam deposited Ir films had a polycrystalline structure with the (111) preferred orientation and their crystallinity increased with annealing temperature. The Ir films were stable and did not interact with the SiC substrate after annealing at temperatures below 800 В°C. The RBS results indicate that the initial reaction at 800 В°C was very fast and almost the entire 50 nm film had reacted leading to the formation of Ir-rich silicides, Ir3Si2 and IrSi. After annealing at 900 and 1000 В°C, the RBS profiles XRD results showed that the solid-state reactions proceeded further and Ir3Si2 was converted to IrSi. At the final annealing temperature of 1000 В°C the predominant phase was IrSi. Thermodynamic analysis of the reaction phases confirmed the formation and sequence of the phases observed.
dc.identifier.citationSolid-state reactions between iridium thin films and silicon carbide in the 700 °C to 1000 °C temperature range / Njoroge, E. [et al.] // Materials Today Communications. - 2023. - 36. - 10.1016/j.mtcomm.2023.106631
dc.identifier.doi10.1016/j.mtcomm.2023.106631
dc.identifier.urihttps://www.doi.org/10.1016/j.mtcomm.2023.106631
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85164299401&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:001038047900001
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/29094
dc.relation.ispartofMaterials Today Communications
dc.subjectThin Film Reaction
dc.subjectThin Film Growth
dc.subjectRutherford backscattering spectrometry
dc.subjectAtmospheric temperature range
dc.titleSolid-state reactions between iridium thin films and silicon carbide in the 700 °C to 1000 °C temperature range
dc.typeArticle
dspace.entity.typePublication
oaire.citation.volume36
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