Publication: The effects of 167 MeV Xe26+ swift heavy ions irradiation on chemical vapour deposited silicon carbide
Дата
2022
Авторы
Thabethe, T. T.
Adeojo, S. A.
Mirzayev, M. N.
Skuratov, V. A.
Njoroge, E. G.
Odutemowo, O. S.
Hlatshwayo, T. T.
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Аннотация
The microstructural changes caused by Xe26+ swift heavy ions on polycrystalline SiC were investigated. Chemically vapour deposited SiC samples were irradiated by 167 MeV Xe26+ SHI with fluences of 1 × 1012 and 5 × 1014 cm−2 at room temperature (RT). The sample composition, phase identification, residual stress and microstructural changes were investigated using X-ray diffraction (XRD) and Raman spectroscopy. The virgin polycrystalline SiC sample was composed of 3C-SiC and 6H-SiC. SHI irradiation caused lattice disorder and lattice expansion. The lattice volume of the SiC samples was observed to increase from 82.2021 Å3 before irradiation to 82.7656 Å3 after irradiating to a fluence of 5 × 1014 cm−2. The SiC sample before and after irradiation had tensile and bi-axial stress which was not homogeneous. The maximum irradiation-induced stress on the SiC microstructure did not exceed 690 MPa after irradiating to the highest fluence. © 2022 Elsevier B.V.
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The effects of 167 MeV Xe26+ swift heavy ions irradiation on chemical vapour deposited silicon carbide / Thabethe, T.T. [et al.] // Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. - 2022. - 527. - P. 58-64. - 10.1016/j.nimb.2022.07.013
URI
https://www.doi.org/10.1016/j.nimb.2022.07.013
https://www.scopus.com/record/display.uri?eid=2-s2.0-85135291166&origin=resultslist
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https://openrepository.mephi.ru/handle/123456789/28188
https://www.scopus.com/record/display.uri?eid=2-s2.0-85135291166&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000848839500001
https://openrepository.mephi.ru/handle/123456789/28188