Publication:
The effects of 167 MeV Xe26+ swift heavy ions irradiation on chemical vapour deposited silicon carbide

Дата
2022
Авторы
Thabethe, T. T.
Adeojo, S. A.
Mirzayev, M. N.
Skuratov, V. A.
Njoroge, E. G.
Odutemowo, O. S.
Hlatshwayo, T. T.
Journal Title
Journal ISSN
Volume Title
Издатель
Научные группы
Организационные подразделения
Организационная единица
Институт ядерной физики и технологий
Цель ИЯФиТ и стратегия развития - создание и развитие научно-образовательного центра мирового уровня в области ядерной физики и технологий, радиационного материаловедения, физики элементарных частиц, астрофизики и космофизики.
Выпуск журнала
Аннотация
The microstructural changes caused by Xe26+ swift heavy ions on polycrystalline SiC were investigated. Chemically vapour deposited SiC samples were irradiated by 167 MeV Xe26+ SHI with fluences of 1 × 1012 and 5 × 1014 cm−2 at room temperature (RT). The sample composition, phase identification, residual stress and microstructural changes were investigated using X-ray diffraction (XRD) and Raman spectroscopy. The virgin polycrystalline SiC sample was composed of 3C-SiC and 6H-SiC. SHI irradiation caused lattice disorder and lattice expansion. The lattice volume of the SiC samples was observed to increase from 82.2021 Å3 before irradiation to 82.7656 Å3 after irradiating to a fluence of 5 × 1014 cm−2. The SiC sample before and after irradiation had tensile and bi-axial stress which was not homogeneous. The maximum irradiation-induced stress on the SiC microstructure did not exceed 690 MPa after irradiating to the highest fluence. © 2022 Elsevier B.V.
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Цитирование
The effects of 167 MeV Xe26+ swift heavy ions irradiation on chemical vapour deposited silicon carbide / Thabethe, T.T. [et al.] // Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. - 2022. - 527. - P. 58-64. - 10.1016/j.nimb.2022.07.013
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