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The influence of helium-induced defects on the migration of strontium implanted into SiC above critical amorphization temperature

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dc.contributor.authorMokgadi, T. F.
dc.contributor.authorAbdalla, Z. A. Y.
dc.contributor.authorMadhuku, M.
dc.contributor.authorNjoroge, E. G.
dc.contributor.authorSkuratov, V. A.
dc.contributor.authorСкуратов, Владимир Алексеевич
dc.date.accessioned2024-12-27T11:45:46Z
dc.date.available2024-12-27T11:45:46Z
dc.date.issued2023
dc.description.abstractThe presence of radiation-induced defects and the high temperature of implantation are breeding grounds for helium (He) to accumulate and form He-induced defects (bubbles, blisters, craters, and cavities) in silicon carbide (SiC). In this work, the influence of He-induced defects on the migration of strontium (Sr) implanted into SiC was investigated. Sr-ions of 360 keV were implanted into polycrystalline SiC to a fluence of 2 × 10 16 Sr-ions/cm 2 at 600°C (Sr-SiC). Some of the Sr-SiC samples were then co-implanted with He-ions of 21.5 keV to a fluence of 1 × 10 17 He-ions/cm 2 at 350°C (Sr + He-SiC). The Sr-SiC and Sr + He-SiC samples were annealed for 5 h at 1,000°C. The as-implanted and annealed samples were characterized by Raman spectroscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), and Rutherford backscattered spectrometry (RBS). Implantation of Sr retained some defects in SiC, while co-implantation of He resulted in the formation of He-bubbles, blisters, and craters (exfoliated blisters). Blisters close to the critical height and size were the first to exfoliate after annealing. He-bubbles grew larger after annealing owing to the capture of more vacancies. In the co-implanted samples, Sr was located in three regions: the crystalline region (near the surface), the bubble region (where the projected range of Sr was located), and the damage region toward the bulk. Annealing the Sr + He-SiC caused the migration of Sr towards the bulk, while no migration was observed in the Sr-SiC samples. The migration was governed by “vacancy migration driven by strain fileds.”
dc.identifier.citationThe influence of helium-induced defects on the migration of strontium implanted into SiC above critical amorphization temperature / Mokgadi, T. F. [et al.] // Frontiers in Materials. - 2023. - 10. - 10.3389/fmats.2023.1192989
dc.identifier.doi10.3389/fmats.2023.1192989
dc.identifier.urihttps://www.doi.org/10.3389/fmats.2023.1192989
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85177673133&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/29466
dc.relation.ispartofFrontiers in Materials
dc.subjectBlisters
dc.subjectHigh-Temperature Applications
dc.subjectRutherford backscattering spectrometry
dc.subjectRadiation damage
dc.titleThe influence of helium-induced defects on the migration of strontium implanted into SiC above critical amorphization temperature
dc.typeArticle
dspace.entity.typePublication
oaire.citation.volume10
relation.isAuthorOfPublicationa42d0cba-a1ca-4481-b526-7b326b53db08
relation.isAuthorOfPublication.latestForDiscoverya42d0cba-a1ca-4481-b526-7b326b53db08
relation.isOrgUnitOfPublicationba0b4738-e6bd-4285-bda5-16ab2240dbd1
relation.isOrgUnitOfPublication.latestForDiscoveryba0b4738-e6bd-4285-bda5-16ab2240dbd1
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