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Limitations of Methods for Evaluating the Hardness of Microelectronic Devices to Single Event Effects on Ion Accelerators

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dc.contributor.authorChumakov, A. I.
dc.contributor.authorSogoyan, A. V.
dc.contributor.authorYanenko, A. V.
dc.contributor.authorЧумаков, Александр Иннокентьевич
dc.contributor.authorСогоян, Армен Вагоевич
dc.contributor.authorЯненко, Андрей Викторович
dc.date.accessioned2024-12-26T09:41:28Z
dc.date.available2024-12-26T09:41:28Z
dc.date.issued2022
dc.description.abstract© 2022, Pleiades Publishing, Ltd.Abstract: The results of the analysis of limitations on the parameters of ion beams during experimental studies to estimate the sensitivity of a VLSI to the influence of heavy charged particles by single event effects (SEEs) are presented. The restrictions on the ion ranges, the bunch structure of the ion beam, the possibilities of changing the linear energy transfer (LET) by changing the angle of incidence of ions, the type of ions, and the use of energy degraders are substantiated.
dc.format.extentС. 16-23
dc.identifier.citationChumakov, A. I. Limitations of Methods for Evaluating the Hardness of Microelectronic Devices to Single Event Effects on Ion Accelerators / Chumakov, A.I., Sogoyan, A.V., Yanenko, A.V. // Russian Microelectronics. - 2022. - 51. - № 1. - P. 16-23. - 10.1134/S1063739722010048
dc.identifier.doi10.1134/S1063739722010048
dc.identifier.urihttps://www.doi.org/10.1134/S1063739722010048
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85126563727&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/28856
dc.relation.ispartofRussian Microelectronics
dc.titleLimitations of Methods for Evaluating the Hardness of Microelectronic Devices to Single Event Effects on Ion Accelerators
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue1
oaire.citation.volume51
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