Publication: Semiconductor Plasma Antennas Formed by Laser Radiation
Дата
2019
Авторы
Bogachev, N. N.
Gusein-zade, N. G.
Zhluktova, I. V.
Kazantsev, S. Y.
Tsvetkov, V. B.
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Аннотация
© 2019, Pleiades Publishing, Ltd.Abstract: Efficiency of the transmission of high-frequency signals by semiconductor plasma antennas based on Ge and Si single crystals with surface nonequilibrium electron-hole plasma generated by laser diode radiation has been experimentally studied. Dependences of the amplitude of a radiated 6- to 7.5-GHz microwave signal on the laser power and size of the laser-irradiated region on the semiconductor transmitting dipole antenna are determined. It is shown that a more than tenfold increase can be achieved in the efficiency of useful signal transmission by the plasma antenna formed in Ge crystals.
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Semiconductor Plasma Antennas Formed by Laser Radiation / Bogachev, N.N. [et al.] // Technical Physics Letters. - 2019. - 45. - № 12. - P. 1223-1225. - 10.1134/S1063785019120174
URI
https://www.doi.org/10.1134/S1063785019120174
https://www.scopus.com/record/display.uri?eid=2-s2.0-85077573850&origin=resultslist
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https://openrepository.mephi.ru/handle/123456789/19248
https://www.scopus.com/record/display.uri?eid=2-s2.0-85077573850&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000511194800015
https://openrepository.mephi.ru/handle/123456789/19248