Publication: Blocking of Impacts of Single Ionizing Particles by CMOS C-Element in Two-Phase Systems
Дата
2019
Авторы
Katunin, Y. V.
Petrov, K. A.
Stenin, V. Y.
Journal Title
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Volume Title
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Аннотация
© 2019 IEEE.The work presents the TCAD simulation of the 65 nm bulk CMOS C-element as resistant to the single-event transients. The charge collection from a track of a single nuclear particle simulates in impacted on drain regions of the transistors, which leads to the error pulses in the output of 2-phase inverters and C-element. The TCAD simulation used the tracks along the normal to the chip. The linear energy transfer from a particle to the track is 60 MeV.cm2/mg.
Описание
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Цитирование
Katunin, Y. V. Blocking of Impacts of Single Ionizing Particles by CMOS C-Element in Two-Phase Systems / Katunin, Y.V., Petrov, K.A., Stenin, V.Y. // 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings. - 2019. - P. 189-192. - 10.1109/MIEL.2019.8889609
URI
https://www.doi.org/10.1109/MIEL.2019.8889609
https://www.scopus.com/record/display.uri?eid=2-s2.0-85075358706&origin=resultslist
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https://openrepository.mephi.ru/handle/123456789/18916
https://www.scopus.com/record/display.uri?eid=2-s2.0-85075358706&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000565455600040
https://openrepository.mephi.ru/handle/123456789/18916