Publication: Kinetic Phenomena in a Semiconductor Excited by an Oriented Beam of Fast Particles
Аннотация
© 2022, Pleiades Publishing, Ltd.Abstract: It is shown that the passage of channeled particles through a crystal without a center of symmetry or in a magnetic field leads to the appearance of a current, i.e., quasi-photogalvanic and quasi-photomagnetic effects. The theory of these phenomena is developed. The orientation dependence of the quasi-photomagnetic and quasi-photogalvanic currents on the entry angle of a channeled particle with respect to the crystallographic planes is predicted. The dependence of the effect on the state and quantum transitions of a channeled particle is studied. The contribution of matrix elements of the first and second kinds to the quasi-photogalvanic effect is investigated. The intensity of the quasi-photogalvanic current induced by the nondipole radiation of hard photons generated by a high-energy channeled particle is estimated.
Описание
Ключевые слова
Цитирование
Mazur, E. A. Kinetic Phenomena in a Semiconductor Excited by an Oriented Beam of Fast Particles / Mazur, E.A. // Journal of Surface Investigation. - 2022. - 16. - № 3. - P. 347-358. - 10.1134/S1027451022020136
URI
https://www.doi.org/10.1134/S1027451022020136
https://www.scopus.com/record/display.uri?eid=2-s2.0-85133001506&origin=resultslist
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https://openrepository.mephi.ru/handle/123456789/28034
https://www.scopus.com/record/display.uri?eid=2-s2.0-85133001506&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000819020400006
https://openrepository.mephi.ru/handle/123456789/28034