Publication: Comparative Characteristic Analysis of Thermophotovoltaic p-InAsSbP/n-InAs Converters Irradiated on p- and n-Sides
Дата
2019
Авторы
Matveev, B. A.
Ratushnyi, V. I.
Rybal'chenko, A. Y.
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© 2019, Pleiades Publishing, Ltd.Abstract: The basic characteristics of thermophotovoltaic heterostructure p-InAsSbP/n-InAs converters have been simulated. The converters have been designed so that a contact to the irradiated p-InAsSbP layer has a limited area or, in the flip-chip design, radiation is introduced through a contact-free part of the n+-InAs substrate. It has been shown that the design features of the converter influence its efficiency and active region temperature.
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Matveev, B. A. Comparative Characteristic Analysis of Thermophotovoltaic p-InAsSbP/n-InAs Converters Irradiated on p- and n-Sides / Matveev, B.A., Ratushnyi, V.I., Rybal'chenko, A.Y. // Technical Physics. - 2019. - 64. - № 8. - P. 1164-1167. - 10.1134/S1063784219080140
URI
https://www.doi.org/10.1134/S1063784219080140
https://www.scopus.com/record/display.uri?eid=2-s2.0-85070933446&origin=resultslist
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https://openrepository.mephi.ru/handle/123456789/18577
https://www.scopus.com/record/display.uri?eid=2-s2.0-85070933446&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000482448200015
https://openrepository.mephi.ru/handle/123456789/18577