Персона: Гусев, Александр Сергеевич
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Институт нанотехнологий в электронике, спинтронике и фотонике
Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе.
Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.
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Александр Сергеевич
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- ПубликацияТолько метаданныеHyperfine Characteristics of Quantum Registers NV-13С in Diamond Nanocrystals Formed by Seeding Approach from Isotopic Aza-Adamantane and Methyl-Aza-Adamanthane(2020) Kilin, S. Y.; Pushkarchuk, A. L.; Kuten, S. A.; Jelezko, F.; Nizovtsev, A. P.; Gusev, A. S.; Низовцев, Александр Павлович; Гусев, Александр Сергеевич© 2020, Pleiades Publishing, Ltd.Abstract: We predict the characteristics of hyperfine interactions (hfi) for a number of electron-nuclear spin systems NV-13C in diamonds grown by seeding approach from the specific isotopic aza-adamantane or methyl-aza-adamantane molecules differing in 13C position in the precursor as well as in the orientation of the NV center in the post-obtained diamond. For the purpose we have used the spatial and hfi data simulated previously for the cluster C510[NV]–H252. The data obtained can be used to identify (and correlate with the precursor used) the specific NV-13C spin system by measuring the hfi-induced splitting in optically detected magnetic resonance spectra being characteristic for the NV-13C system.
- ПубликацияТолько метаданныеStudy of the Processes of Mesoporous-Silicon Carbonization(2019) Gusev, A. S.; Kargin, N. I.; Ryndya, S. M.; Safaraliev, G. K.; Siglovaya, N. V.; Sultanov, A. O.; Timofeev, A. A.; Гусев, Александр Сергеевич; Каргин, Николай Иванович; Рындя, Сергей Михайлович; Сафаралиев, Гаджимет Керимович; Сигловая, Наталия Владимировна; Султанов, Азрет Оюсович; Тимофеев, Алексей Афанасьевич© 2019, Pleiades Publishing, Ltd.Abstract: Experimental and theoretical studies of the processes of mesoporous-silicon carbonization during the formation of buffer layers for the subsequent epitaxy of 3C-SiC films and related wide-gap semiconductors are performed. Analytical expressions for the effective diffusion factor and diffusion length of carbon atoms in a porous system are obtained. The proposed model takes into account the processes of Knudsen diffusion, coagulation and the overgrowth of pores during the formation of a silicon-carbide layer.
- ПубликацияТолько метаданныеPLD Grown SiC Thin Films on Al2O3: Morphology and Structure(2019) Kargin, N. I.; Gusev, A. S.; Ryndya, S. M.; Timofeev, A. A.; Grekhov, M. M.; Siglovaya, N. V.; Antonenko, S. V.; Каргин, Николай Иванович; Гусев, Александр Сергеевич; Рындя, Сергей Михайлович; Тимофеев, Алексей Афанасьевич; Сигловая, Наталия Владимировна; Антоненко, Сергей Васильевич© 2019, Pleiades Publishing, Ltd.Abstract: In this paper, submicron SiC thin films are obtained on α-Al2O3 (0001) substrates from a ceramic target in vacuum by means of pulsed laser deposition. The influence of the substrate temperature on the composition, structure and surface morphology of the experimental samples is studied using scanning and transmission electron microscopy, scanning probe microscopy, X-ray diffractometry, Fourier transform infrared spectroscopy and Raman spectrometry. It is shown that at Tsub = 1000°C the heteroepitaxial growth of 3C-SiC is observed with the following preferential orientation with respect to the substrate: [0001]Al2O3||[111]SiС and [211A]Al2O3||[211]SiС, [100]Al2O3||[(Formula presented.)]SiС. The shape of the reflections from the {011} and {131} 3C–SiC planes on the electron diffraction pattern indicates the presence of local regions in the film that are rotated at angles of up to 7.5° around the growth axis. Thus, it is found that the 3C–SiC film obtained on α‑Al2O3 at a substrate temperature of 1000°C has a mosaic structure partially compensating for the mechanical stresses arising from a mismatch between the lattice parameters and thermal-expansion coefficients along the basal plane.
- ПубликацияТолько метаданныеRelaxation of Mechanical Stress in Epitaxial Films of Cubic Silicon Carbide on Silicon Substrates with a Buffer Porous Layer(2021) Gusev, A. S.; Kargin, N. I.; Ryndya, S. M.; Safaraliev, G. K.; Siglovaya, N. V.; Smirnova, M. O.; Solomatin, I. O.; Sultanov, A. O.; Timofeev, A. A.; Гусев, Александр Сергеевич; Каргин, Николай Иванович; Рындя, Сергей Михайлович; Сафаралиев, Гаджимет Керимович; Сигловая, Наталия Владимировна; Смирнова, Марина Олеговна; Султанов, Азрет Оюсович; Тимофеев, Алексей Афанасьевич© 2021, Pleiades Publishing, Ltd.Abstract: The results of this study quantitatively and qualitatively illustrate the processes of mismatch stress relaxation upon epitaxy of cubic silicon carbide on silicon. The mechanical stress distribution in 3C–SiC/Si and 3C–SiC/por-Si heterostructures is analyzed. It is shown that a porous buffer layer plays a role in the reduction of mismatch stress. The data of the theoretical study are verified by experimental residual stress in 3C–SiC/Si and 3C–SiC/por-Si samples.
- ПубликацияТолько метаданныеEffect of graphene domains orientation on quasi van der Waals epitaxy of GaN(2021) Kovalchuk, N. G.; Mikhalik, M. M.; Borisenko, D. P.; Gusev, A. S.; Kargin, N. I.; Dobrokhotov, P. L.; Timofeev, A. A.; Labunov, V. A.; Komissarov, I. V.; Борисенко, Денис Петрович; Гусев, Александр Сергеевич; Каргин, Николай Иванович; Тимофеев, Алексей Афанасьевич; Лабунов, Владимир© 2021 Author(s).We demonstrate the growth features of III-nitrides on graphene buffer layers obtained by the CVD method on a copper catalyst with different dominant grain orientations. The reflection high-energy electron diffraction technique (RHEED) is used to map the 2D reciprocal space structures of graphene buffers and growing nitride layers. The RHEED reciprocal space pattern for the graphene layer grown on a (111) textured copper foil and transferred to a SiO2/Si substrate demonstrates the sixfold symmetry characteristic of a highly oriented material. In turn, graphene grown on a Cu (100) foil consists of two types of domains that are 30° rotated relative to each other. It has also been demonstrated that III-nitride films exactly repeat the texture of the 2D graphene buffers. The GaN sample grown over the highly textured substrate demonstrates a clear sixfold symmetry of the RHEED reciprocal space map as well as { 10 1 ¯ 3 } XRD pole figure, which is close to 2D surface morphology. In turn, the GaN film grown over the graphene buffer layer transferred from the Cu (100) textured foil has 12-fold axial symmetry, which is equivalent to the essentially two-domain in-plane orientation of the initial graphene.
- ПубликацияТолько метаданныеFew-Layer Graphene as an Efficient Buffer for GaN/AlN Epitaxy on a SiO2/Si Substrate: A Joint Experimental and Theoretical Study(2022) Borisenko, D. P.; Gusev, A. S.; Kargin, N. I.; Dobrokhotov, P. L.; Timofeev, A. A.; Labunov, V. A.; Mikhalik, M. M.; Katin, K. P.; Maslov, M. M.; Dzhumaev, P. S.; Komissarov, I. V.; Борисенко, Денис Петрович; Гусев, Александр Сергеевич; Каргин, Николай Иванович; Тимофеев, Алексей Афанасьевич; Лабунов, Владимир; Катин, Константин Петрович; Маслов, Михаил Михайлович; Джумаев, Павел СергеевичSingle-layer (SLG)/few-layer (FLG) and multilayer graphene (MLG) (andgt;15 layers) samples were obtained using the CVD method on high-textured Cu foil catalysts. In turn, plasma-assisted molecular beam epitaxy was applied to carry out the GaN graphene-assisted growth. A thin AlN layer was used at the initial stage to promote the nucleation process. The effect of graphene defectiveness and thickness on the quality of the GaN epilayers was studied. The bilayer graphene showed the lowest strain and provided optimal conditions for the growth of GaN/AlN. Theoretical studies based on the density functional theory have shown that the energy of interaction between graphene and AlN is almost the same as between graphite sheets (194 mJ/m2). However, the presence of vacancies and other defects as well as compression-induced ripples and nitrogen doping leads to a significant change in this energy. © 2022 by the authors.
- ПубликацияТолько метаданныеQuantum Memory on 13C–13C Dimers in Diamond with NV Centers: Simulation by Quantum Chemistry Methods(2023) Nizovtsev, A. P.; Pushkarchuk, A. L.; Gusev, A. S.; Kargin, N. I.; Низовцев, Александр Павлович; Пушкарчук, Александр Леонидович; Гусев, Александр Сергеевич; Каргин, Николай Иванович
- ПубликацияТолько метаданныеLocal laser annealing of 3C-SiC film deposited on the silicon substrate by CVD(2019) Mikhalik, M. M.; Avramchuk, A. V.; Komissarov, I. V.; Yu, Fominski, V.; Romanov, R. I.; Sultanov, A. O.; Siglovaya, N. V.; Ryndya, S. M.; Gusev, A. S.; Labunov, V. A.; Kargin, N. I.; Фоминский, Вячеслав Юрьевич; Романов, Роман Иванович; Султанов, Азрет Оюсович; Сигловая, Наталия Владимировна; Рындя, Сергей Михайлович; Гусев, Александр Сергеевич; Лабунов, Владимир; Каргин, Николай Иванович© Published under licence by IOP Publishing Ltd. In this work, we try to suite an approach, which concerns of epitaxial graphene growth by laser irradiation of 3C-SiC (111) film deposited on silicon substrate (111) by chemical vapor deposition method. Laser treatment was performed by pulsed 1064 nm laser with 20 Hz repetition rate and 15 ns pulse duration, the fluency was varied 0-1.5 J/cm 2 . Raman spectroscopy studies show that for fluence above 0.8 J/cm 2 2D band is noticeable revealing formation of high crystallographic quality graphitic (graphene) film.
- ПубликацияТолько метаданныеInvestigation of Isotopic Composition and Purity of 13C-Enriched CVD-Diamond Layers by Raman Spectroscopy and Photoluminescence(2023) Salkazanov, A. T.; Smirnova, M. O.; Tarelkin, S. A.; Gusev, A. S.; Kaloshin, M. M.; Kargin, N. I.; Nizovtsev, A. P.; Салказанов, Александр Тотразович; Смирнова, Марина Олеговна; Тарелкин, Сергей Александрович; Гусев, Александр Сергеевич; Калошин, Михаил Михайлович; Каргин, Николай Иванович; Низовцев, Александр Павлович
- ПубликацияТолько метаданныеOptically Detectable Magnetic Resonance of NV-Center Ensembles in CVD Diamond with Different 13C Contents(2024) Salkazanov, A.T.; Gusev, A.S.; Kaloshin, M.M.; Sauri, A.D.; Zharikov, A.M.; Nizovtsev, A.P.; Kilin, S.Ya.; Kargin, N.I.; Ryzhuk, R.V.; Салказанов, Александр Тотразович; Гусев, Александр Сергеевич; Калошин, Михаил Михайлович; Саури, Антон Давидович; Жариков, Александр Михайлович; Низовцев, Александр Павлович; Килин, Сергей Яковлевич; Каргин, Николай Иванович; Рыжук, Роман Валериевич