Персона: Веселов, Денис Сергеевич
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Технология изготовления диэлектрических мембранных конструкций для формирования чувствительных элементов датчиков концентрации газа
Temperature distribution on dielectric membrane structures for sensitive elements of semiconductor gas sensors
© 2019 Published under licence by IOP Publishing Ltd. The aim of this article is to show a simulation of temperature distribution on dielectric membrane structures with membranes of different dielectric materials in the measuring mode of a semiconductor gas sensor. The simulation results were obtained using the software package Synopsys TCAD. In various moments of the measuring cycle were obtained two-dimensional temperature distributions on membrane structures. Dependencies of temperature versus time for the variety of the coordinates on membranes, temperature versus coordinates at the sensitive layer area's highest heat value and temperature versus time in the center of the membranes are presented. Recommendations are given for the selection of membrane material for the heat-insulating membrane structure of sensitive elements for semiconductor gas sensors.
Automated unit of the chemical wet etching
© Published under licence by IOP Publishing Ltd. This paper is devoted to the development of wet etching unit and its control system. The experimental model represents the reaction chamber, equipped with the stirrer and steam-gas condenser, located inside the heated chamber. The unit is also equipped with heat-insulated reservoirs for preheating of etchants and water. The control system provides automated supplying of liquids into the reaction chamber. This allows realizing multistage etching in single technological cycle with etchants replacement and substrate washing, without its extraction from the reaction chamber. With using the unit was studied deep anisotropic etching of silicon in various alkaline etchants. Was revealed, that unit provides the uniformity of etched surface on the level of about 1 μm.
Simulation of low energy ion implantation in silicon
© 2019 Published under licence by IOP Publishing Ltd. This report is devoted to simulation of distributions of boron and indium ions implanted into the silicon substrates with energies up to 10 keV. The simulation was conducted immediately after implantation and after subsequent annealing in inert and oxidizing ambient. Post-implant and post-anneal distributions of impurities concentration versus depth were obtained. It was demonstrated, that the super-steep retrograde distribution of indium in silicon is provided exactly by the annealing in an oxidizing ambient. Also, it was demonstrated, that the annealing does not provide the super-steep retrograde distribution of boron in silicon. Thus, it was shown, that indium doping of gate region contributes to suppression of the short-channel effects in nanoscale MOSFETs, unlike boron doping.