2019, Veselov, D. S., Voronov, Y. A., Metel, Yu. V., Веселов, Денис Сергеевич, Воронов, Юрий Александрович

© 2019 Published under licence by IOP Publishing Ltd. This report is devoted to simulation of distributions of boron and indium ions implanted into the silicon substrates with energies up to 10 keV. The simulation was conducted immediately after implantation and after subsequent annealing in inert and oxidizing ambient. Post-implant and post-anneal distributions of impurities concentration versus depth were obtained. It was demonstrated, that the super-steep retrograde distribution of indium in silicon is provided exactly by the annealing in an oxidizing ambient. Also, it was demonstrated, that the annealing does not provide the super-steep retrograde distribution of boron in silicon. Thus, it was shown, that indium doping of gate region contributes to suppression of the short-channel effects in nanoscale MOSFETs, unlike boron doping.