2009, Зебрев, Г. И., Зебрев, Геннадий Иванович

2019, Galimova, R. M., Galimov, A. M., Zebrev, G. I., Зебрев, Геннадий Иванович

© 2018 Elsevier B.V. A simple and self-consistent approach has been proposed for simulation of the proton-induced soft error rate based on the heavy ion induced single event upset cross-section data and vice versa. The approach relies on the GEANT4 assisted Monte Carlo simulation of the secondary particle LET spectra produced by nuclear interactions. The method has been validated with the relevant in-flight soft error rate data for space protons and heavy ions. An approximate analytical relation is proposed and validated for a fast recalculation between two types of experimental data.

2019, Anashin, V. S., Zimin, P. A., Mrozovskaya, E. V., Chubunov, P. A., Zebrev, G. I., Мрозовская, Елизавета Владимировна, Чубунов, Павел Александрович, Зебрев, Геннадий Иванович

© 2019 Elsevier B.V.This paper describes the radiation response and I-V characteristics of the stacked p-MNOS based RADFETs measured at different dose rates and irradiation temperatures. It is shown that the enhanced charge trapping takes place at the interface of the thick gate dielectrics in the MNOS transistors at low dose rates (ELDRS). The sensitivity of the radiation effect to irradiation temperature has also experimentally revealed. We associate both effects with the temperature and dose rate dependence of the effective charge yield in the thick oxides described within the framework of the previously proposed model. We have also simulated the I-V characteristics of the transistors for different total doses and irradiation conditions. It has been found the used electric and radiation models qualitatively and semi-quantitatively describe the observed dependencies of the RADFETs’ sensitivity on dose rates and irradiation temperatures for the devices with different thickness of insulators.