Персона: Зебрев, Геннадий Иванович
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Static and dynamic oxide-Trapped-charge-induced variability in nanoscale CMOS circuits
© 1963-2012 IEEE. The interdevice mismatch and intradevice temporal instability in the nanoscale CMOS circuits is examined from a unified point of view as a static and dynamic parts of the variability concerned with stochastic oxide charge trapping and detrapping. This approach has been benchmarked on the recent evidence of the radiation-induced increase of intertransistor mismatch in 60-nm ICs. A possible reliability limitation in ultrascale circuits concerned with the single or a few charged defect instability is pointed out and estimated.
A linear "extrinsic" compact model for short-channel MOSFET drain current asymptotic dependence on drain bias in saturation regime
© 2019 SPIE. We derived the equation for the drain current of a short-channel MOSFET with nonzero differential conductance in saturation regime describing its nonlinear dependence on "extrinsic" drain bias and accounting for the parasitic and contact series resistances. This implicit equation could be numerically solved in the entire range of the drain biases. We have also derived the equation for the differential conductance of the "extrinsic" MOSFET in the saturation regime. Finally, we have proposed a linear approximation for asymptotic dependence of the "extrinsic" MOSFET drain current on "extrinsic" drain bias in saturation regime.
Compact modeling of electrical characteristics of p-MNOS based RADFETs
© 2019 SPIE. We simulated in this work the electrical characteristics of p-MNOS based dosimeters before and after irradiation. The parameters of dose sensitivity for the samples irradiated in the different electric modes of operation were obtained. A good agreement between simulation and the measurement results was shown.