2019, Shostachenko, S. A., Zakharchenko, R. V., Ryzhuk, R. V., Leshchev, S. V., Захарченко, Роман Викторович, Рыжук, Роман Валериевич, Лещев, Сергей Валерьевич

© 2019 Published under licence by IOP Publishing Ltd. Tantalum nitride thin films were deposited on Al2O3 substrates by the dc-magnetron sputtering technique. The nitrogen content in the argon/nitrogen flow varied from 5 to 50%. Structural properties were studied using X-ray diffraction. The ratio of Ar:N2 was 4:1; the ratio of Ta:N became 1:1. Sheet resistance depends on thickness and is in the range of 20 - 80 Ω/□ due to thickness 100 - 50 nm. The TaN films deposited at a nitrogen/argon ratio of 20% show the thermal stability of the resistance in the 25-400°C temperature range. Sheet resistance degradation was ∼ 5%. The TCR value was determined in the range of 25 - 300 C and was equal to - 21 ppm/K.

2019, Shostachenko, S. A., Porokhonko, Y. A., Zakharchenko, R. V., Leshchev, S. V., Maslov, M. M., Katin, K. P., Захарченко, Роман Викторович, Лещев, Сергей Валерьевич, Маслов, Михаил Михайлович, Катин, Константин Петрович

© 2019 Published under licence by IOP Publishing Ltd. This paper is dedicated to the experimental investigation of Ohmic contacts to the n+-doped region of the AlGaN/GaN transistor heterostructure based on Ti/Al/Ni/Au metallization. The Al-Ti-N system has been assessed on the basis of available thermodynamic descriptions for binary subsystems. The effect of annealing temperature on the specific resistance of Ohmic contact was studied.