Персона: Борисенко, Денис Петрович
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Институт нанотехнологий в электронике, спинтронике и фотонике
Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе.
Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.
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- ПубликацияОткрытый доступPlasma assisted-MBE of GaN and AlN on graphene buffer layers(2019) Kovalchuk, N. G.; Borisenko, D. P.; Gusev, A. S.; Kargin, N. I.; Komissarov, I. V.; Labunov, V. A.; Борисенко, Денис Петрович; Гусев, Александр Сергеевич; Каргин, Николай Иванович; Лабунов, ВладимирThe possibility of using chemical vapor deposition (CVD) graphene as a 2D buffer layer for epitaxial growth of III-nitrides by plasma assisted-MBE on amorphous substrates (SiO2 prepared by thermal oxidation of Si wafer) was investigated. The comparative study of graphene-coated parts of the wafers and the parts without graphene was carried out by scanning electron microscopy and X-ray diffractometry. It was shown that epitaxial GaN and AlN films with close to 2D surface morphology can be obtained by plasma assisted-MBE on amorphous SiO2 substrates with a multilayer graphene buffer using the HT AlN nucleation layer. (C) 2019 The Japan Society of Applied Physics
- ПубликацияТолько метаданныеAnalysis of Carrier Scattering Mechanisms in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier(2024) Gusev, A. S.; Sultanov, A. O.; Katkov, A. V.; Ryndya, S. M.; Siglovaya, N. V.; Klochkov, A. N.; Ryzhuk, R. V.; Kargin, N. I.; Borisenko, D. P.; Гусев, Александр Сергеевич; Султанов, Азрет Оюсович; Катков, Андрей Викторович; Рындя, Сергей Михайлович; Сигловая, Наталия Владимировна; Клочков, Алексей Николаевич; Рыжук, Роман Валериевич; Каргин, Николай Иванович; Борисенко, Денис Петрович
- ПубликацияТолько метаданныеTechnological Features of Graphene-based RF NEMS Capacitive Switches on a Semi-insulating Substrate(2019) Litun, Y.; Litun, V.; Kononenko, O.; Chichkov, M.; Borisenko, D.; Борисенко, Денис ПетровичThis paper concerns various technological specificity design and manufacturing of radiofrequency graphene-based nanoelectromechanical (GNEMS) switches on a semi-insulating substrate (e.g., GaN or GaAs). GNEMS switches are considered as a prospective solution to improve and miniaturize microwave devices and analog integrated circuits, and to raise their operating frequency limit. In the current research, GNEMS switch technology aspects are considered taking into account modern simulation, design, and fabrication features. Key results of this research include a description of the proposed GNEMS switch structure on GaN and GaAs substrates, the fabrication and test process. A difference between the properties of synthesized and embedded graphene is noted. The microwave performance was evaluated using full-wave numerical simulation in ANSYS HFSS, and the obtained scattering parameters are displayed. All these steps are required to employ GNEMS switches in prospective integrated circuits.
- ПубликацияТолько метаданныеEffect of graphene domains orientation on quasi van der Waals epitaxy of GaN(2021) Kovalchuk, N. G.; Mikhalik, M. M.; Borisenko, D. P.; Gusev, A. S.; Kargin, N. I.; Dobrokhotov, P. L.; Timofeev, A. A.; Labunov, V. A.; Komissarov, I. V.; Борисенко, Денис Петрович; Гусев, Александр Сергеевич; Каргин, Николай Иванович; Тимофеев, Алексей Афанасьевич; Лабунов, Владимир© 2021 Author(s).We demonstrate the growth features of III-nitrides on graphene buffer layers obtained by the CVD method on a copper catalyst with different dominant grain orientations. The reflection high-energy electron diffraction technique (RHEED) is used to map the 2D reciprocal space structures of graphene buffers and growing nitride layers. The RHEED reciprocal space pattern for the graphene layer grown on a (111) textured copper foil and transferred to a SiO2/Si substrate demonstrates the sixfold symmetry characteristic of a highly oriented material. In turn, graphene grown on a Cu (100) foil consists of two types of domains that are 30° rotated relative to each other. It has also been demonstrated that III-nitride films exactly repeat the texture of the 2D graphene buffers. The GaN sample grown over the highly textured substrate demonstrates a clear sixfold symmetry of the RHEED reciprocal space map as well as { 10 1 ¯ 3 } XRD pole figure, which is close to 2D surface morphology. In turn, the GaN film grown over the graphene buffer layer transferred from the Cu (100) textured foil has 12-fold axial symmetry, which is equivalent to the essentially two-domain in-plane orientation of the initial graphene.
- ПубликацияТолько метаданныеFew-Layer Graphene as an Efficient Buffer for GaN/AlN Epitaxy on a SiO2/Si Substrate: A Joint Experimental and Theoretical Study(2022) Borisenko, D. P.; Gusev, A. S.; Kargin, N. I.; Dobrokhotov, P. L.; Timofeev, A. A.; Labunov, V. A.; Mikhalik, M. M.; Katin, K. P.; Maslov, M. M.; Dzhumaev, P. S.; Komissarov, I. V.; Борисенко, Денис Петрович; Гусев, Александр Сергеевич; Каргин, Николай Иванович; Тимофеев, Алексей Афанасьевич; Лабунов, Владимир; Катин, Константин Петрович; Маслов, Михаил Михайлович; Джумаев, Павел СергеевичSingle-layer (SLG)/few-layer (FLG) and multilayer graphene (MLG) (andgt;15 layers) samples were obtained using the CVD method on high-textured Cu foil catalysts. In turn, plasma-assisted molecular beam epitaxy was applied to carry out the GaN graphene-assisted growth. A thin AlN layer was used at the initial stage to promote the nucleation process. The effect of graphene defectiveness and thickness on the quality of the GaN epilayers was studied. The bilayer graphene showed the lowest strain and provided optimal conditions for the growth of GaN/AlN. Theoretical studies based on the density functional theory have shown that the energy of interaction between graphene and AlN is almost the same as between graphite sheets (194 mJ/m2). However, the presence of vacancies and other defects as well as compression-induced ripples and nitrogen doping leads to a significant change in this energy. © 2022 by the authors.
- ПубликацияТолько метаданныеПОЛУЧЕНИЕ И ИССЛЕДОВАНИЕ ЭПИТАКСИАЛЬНЫХ СТРУКТУР НИТРИДОВ МЕТАЛЛОВ III-Й ГРУППЫ НА БУФЕРНЫХ СЛОЯХ ГРАФЕНА(2024) Борисенко, Д. П.; Борисенко, Денис Петрович; Каргин Николай Иванович