Персона:
Подлепецкий, Борис Иванович

Организационные подразделения

Организационная единица

Институт нанотехнологий в электронике, спинтронике и фотонике

Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе. Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.

Фамилия

Подлепецкий

Имя

Борис Иванович

Полная страница элемента

Результаты поиска

Теперь показываю 1 - 10 из 21

Только метаданные
Evaluation of commercial PIN diodes as gamma radiation dosimeters
(2019) Nikiforova, M. Y.; Podlepetsky, B. I.; Подлепецкий, Борис Иванович
© 2019 Published under licence by IOP Publishing Ltd. The influence of gamma radiation on the current-voltage characteristics of silicon PIN photodiodes S1223 from Hammamatsu was investigated for their use as gamma radiation dose rate sensitive elements. The transfer characteristic and the dependence of the current sensitivity on the absorbed dose rate in the range from 6.7 Gy(Si)/h to 124 Gy(Si)/h were studied. The range of reverse voltages corresponding to the highest current sensitivity of PIN diodes is determined. An analytical expression of the transfer characteristic for the operating mode with maximum sensitivity to gamma radiation is obtained.
Только метаданные
Estimation of Errors of Integrated Hydrogen Sensors based on MISFET with structure Pd-Ta2O5-SiO2-Si
(2019) Kovalenko, A.; Podlepetsky, B.; Подлепецкий, Борис Иванович
© 2019 IEEE.We have estimated various types of errors of integrated hydrogen sensors based on MISFETs with structure Pd-Ta2O5-SiO2-Si on the basis of experimental studies of the multiple sensors' hydrogen responses, taking into account operating modes. The generalized model for the calculation of these errors was proposed.
Только метаданные
Rapid prototyping of mox gas sensors in form-factor of smd packages
(2019) Samotaev, N.; Oblov, K.; Ivanova, A.; Gorshkova, A.; Podlepetsky, B.; Самотаев, Николай Николаевич; Облов, Константин Юрьевич; Иванова, Анастасия Владимировна; Подлепецкий, Борис Иванович
© 2019 IEEE.this work discusses the design of flexible laser micromilling technology for fast prototyping metal oxide based (MOX) gas sensors in SMD packages as a alternative to traditional silicon clean-room technologies. By laser micromilling technology possible to fabricate custom Micro Electro Mechanical System (MEMS) microhotplate platform and also SMD packages for MOX sensor, that gives complete solution for integration one in devices using IoT conception.
Только метаданные
Modeling errors of the misfet-based sensors' characteristics
(2019) Podlepetsky, B.; Samotaev, N.; Подлепецкий, Борис Иванович; Самотаев, Николай Николаевич
© 2019 IEEE.The accuracy of circuits', electrical and electrophysical models of MIS transistor sensors' elements, taking into account the errors of simplifying assumptions, approximations, extrapolations and experimental dispersions' characteristics in determining the parameters of the models and measured physical quantity is estimated.
Только метаданные
Application of MISFETs for Irradiation Dose Rate Measurement
(2021) Podlepetsky, B.; Pershenkov, V.; Bakerenkov, A.; Felitsyn, V.; Подлепецкий, Борис Иванович; Бакеренков, Александр Сергеевич
© 2021 IEEE.We investigated the possibilities of using field-effect transistors to measure the dose rate of ionizing radiation using the example of an n-channel MOSFET. There were measured the gate voltage of transistors as function of ionizing dose at const values of the drain current and the drain-source voltage for different dose rates, as well as the current-voltage characteristics before and after irradiations. On the basis of the proposed models, the sensitivity, errors, and range of radiation dose rate measurement are estimated.
Только метаданные
Influence of temperature and electrical modes on radiation sensitivity and errors of RADFETs
(2019) Podlepetsky, B. I.; Pershenkov, V. S.; Bakerenkov, A. S.; Felitsyn, V. A.; Rodin, A. S.; Подлепецкий, Борис Иванович; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич
© 2019 IEEE.Influence of temperature and electrical modes on sensitivity and errors of ionizing radiation dose senor based on n- MOSFET (called as RADFET) have been investigated. There were measured the circuit's output voltages being equal to the gate voltage of RADFET-based dosimeter as function of the radiation doses at const values of the drain current and the drain - source voltage (conversion functions), as well as the current - voltage characteristics before, during and after irradiations at different temperatures. We showed how conversion functions, radiation sensitivities and errors are depending on the temperature and electrical modes. It is found that the conversion functions) have two characteristic regions for low and high doses (with negative and with positive radiation sensitivities). To interpret experimental data there were proposed the models of conversion function, its components and errors taking into account the separate contributions of charges in the dielectric and in SiO2-Si interface. Proposed models interpreting the experimental data can be used to predict performances of RADFET-based dosimeters.
Только метаданные
Methods and Tools for Evaluating the Characteristics of MIS-Capacitor Gas Sensors
(2022) Podlepetsky, B. I.; Samotaev, N. N.; Etrekova, M. O.; Litvinov, A. V.; Подлепецкий, Борис Иванович; Самотаев, Николай Николаевич; Этрекова, Майя Оразгельдыевна; Литвинов, Артур Васильевич
Based on the electrophysical models of electrical characteristics of MIS-capacitor sensors, we analyze the features of methods and tools for evaluating metrological characteristics of the sensors in general terms and using the example of hydrogen-sensitive sensor elements with Pd-SiO2-Si structure. Recommendations are given on the choice of optimal circuit modes for determining the performance characteristics of the sensors of concentrations of hydrogen-containing gases and of gas analyzers for various purposes.
Только метаданные
Biomedical Sensors Based on Micro- and Nanotechnology
(2022) Podlepetsky, B. I.; Подлепецкий, Борис Иванович
© 2022, The Author(s), under exclusive license to Springer Nature Switzerland AG.This review paper briefly analyzes the history, development trends, current state of the sensors’ developments based on micro-and nanotechnologies for medical and biological research. The classification of such sensors is presented; their design and technological features and applications are considered.
Только метаданные
Responses’ parameters of hydrogen sensors based on MISFET with Pd(Ag)-Ta 2 O 5 -SiO 2 -Si structure
(2019) Kovalenko, A.; Podlepetsky, B.; Samotaev, N.; Подлепецкий, Борис Иванович; Самотаев, Николай Николаевич
© 2019 Elsevier B.V. The influence of the hydrogen concentration and electric modes of measuring circuits on responses’ parameters of the hydrogen sensors based on metal-insulator-semiconductor field-effect transistor (MISFET) with structure Pd(Ag)-Ta 2 O 5 -SiO 2 -Si have been experimentally studied. MISFET-based sensing elements have been fabricated by means of conventional MOS-technology on single silicon chip together with (p–n)-junction temperature sensor and heater-resistor. The responses of MISFETs for different hydrogen concentrations and drain currents were measured. It was shown how the responses’ amplitude and time parameters depend on hydrogen concentrations and the measuring circuit's electric modes. To interpret results there was developed the generalized model of MISFET's responses for different hydrogen concentrations, parameters of which were calculated using experimental data. These models can be used for simulation and prediction performances of MISFET-based sensors and gas-analysis devices.
Только метаданные
Measurement Circuits' Characteristics of MISFET-based Sensors
(2021) Podlepetsky, B.; Kovalenko, A.; Samotaev, N.; Подлепецкий, Борис Иванович; Самотаев, Николай Николаевич
© 2021 IEEE.We have studied possible variants of the embedding MISFETs' sensing elements in measuring circuits of sensors. The electro-physical models for calculating the characteristics of circuits were proposed and used to estimate its performances.