Персона: Подлепецкий, Борис Иванович
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Институт нанотехнологий в электронике, спинтронике и фотонике
Институт ИНТЭЛ занимается научной деятельностью и подготовкой специалистов в области исследования физических принципов, проектирования и разработки технологий создания компонентной базы электроники гражданского и специального назначения, а также построения современных приборов на её основе.
Наша основная цель – это создание и развитие научно-образовательного центра мирового уровня в области наноструктурных материалов и устройств электроники, спинтроники, фотоники, а также создание эффективной инновационной среды в области СВЧ-электронной и радиационно-стойкой компонентной базы, источников ТГц излучения, ионно-кластерных технологий материалов.
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Теперь показываю 1 - 7 из 7
- ПубликацияТолько метаданныеEvaluation of commercial PIN diodes as gamma radiation dosimeters(2019) Nikiforova, M. Y.; Podlepetsky, B. I.; Подлепецкий, Борис Иванович© 2019 Published under licence by IOP Publishing Ltd. The influence of gamma radiation on the current-voltage characteristics of silicon PIN photodiodes S1223 from Hammamatsu was investigated for their use as gamma radiation dose rate sensitive elements. The transfer characteristic and the dependence of the current sensitivity on the absorbed dose rate in the range from 6.7 Gy(Si)/h to 124 Gy(Si)/h were studied. The range of reverse voltages corresponding to the highest current sensitivity of PIN diodes is determined. An analytical expression of the transfer characteristic for the operating mode with maximum sensitivity to gamma radiation is obtained.
- ПубликацияТолько метаданныеEstimation of Errors of Integrated Hydrogen Sensors based on MISFET with structure Pd-Ta2O5-SiO2-Si(2019) Kovalenko, A.; Podlepetsky, B.; Подлепецкий, Борис Иванович© 2019 IEEE.We have estimated various types of errors of integrated hydrogen sensors based on MISFETs with structure Pd-Ta2O5-SiO2-Si on the basis of experimental studies of the multiple sensors' hydrogen responses, taking into account operating modes. The generalized model for the calculation of these errors was proposed.
- ПубликацияТолько метаданныеRapid prototyping of mox gas sensors in form-factor of smd packages(2019) Samotaev, N.; Oblov, K.; Ivanova, A.; Gorshkova, A.; Podlepetsky, B.; Самотаев, Николай Николаевич; Облов, Константин Юрьевич; Иванова, Анастасия Владимировна; Подлепецкий, Борис Иванович© 2019 IEEE.this work discusses the design of flexible laser micromilling technology for fast prototyping metal oxide based (MOX) gas sensors in SMD packages as a alternative to traditional silicon clean-room technologies. By laser micromilling technology possible to fabricate custom Micro Electro Mechanical System (MEMS) microhotplate platform and also SMD packages for MOX sensor, that gives complete solution for integration one in devices using IoT conception.
- ПубликацияТолько метаданныеModeling errors of the misfet-based sensors' characteristics(2019) Podlepetsky, B.; Samotaev, N.; Подлепецкий, Борис Иванович; Самотаев, Николай Николаевич© 2019 IEEE.The accuracy of circuits', electrical and electrophysical models of MIS transistor sensors' elements, taking into account the errors of simplifying assumptions, approximations, extrapolations and experimental dispersions' characteristics in determining the parameters of the models and measured physical quantity is estimated.
- ПубликацияТолько метаданныеInfluence of temperature and electrical modes on radiation sensitivity and errors of RADFETs(2019) Podlepetsky, B. I.; Pershenkov, V. S.; Bakerenkov, A. S.; Felitsyn, V. A.; Rodin, A. S.; Подлепецкий, Борис Иванович; Бакеренков, Александр Сергеевич; Родин, Александр Сергеевич© 2019 IEEE.Influence of temperature and electrical modes on sensitivity and errors of ionizing radiation dose senor based on n- MOSFET (called as RADFET) have been investigated. There were measured the circuit's output voltages being equal to the gate voltage of RADFET-based dosimeter as function of the radiation doses at const values of the drain current and the drain - source voltage (conversion functions), as well as the current - voltage characteristics before, during and after irradiations at different temperatures. We showed how conversion functions, radiation sensitivities and errors are depending on the temperature and electrical modes. It is found that the conversion functions) have two characteristic regions for low and high doses (with negative and with positive radiation sensitivities). To interpret experimental data there were proposed the models of conversion function, its components and errors taking into account the separate contributions of charges in the dielectric and in SiO2-Si interface. Proposed models interpreting the experimental data can be used to predict performances of RADFET-based dosimeters.
- ПубликацияТолько метаданныеResponses’ parameters of hydrogen sensors based on MISFET with Pd(Ag)-Ta 2 O 5 -SiO 2 -Si structure(2019) Kovalenko, A.; Podlepetsky, B.; Samotaev, N.; Подлепецкий, Борис Иванович; Самотаев, Николай Николаевич© 2019 Elsevier B.V. The influence of the hydrogen concentration and electric modes of measuring circuits on responses’ parameters of the hydrogen sensors based on metal-insulator-semiconductor field-effect transistor (MISFET) with structure Pd(Ag)-Ta 2 O 5 -SiO 2 -Si have been experimentally studied. MISFET-based sensing elements have been fabricated by means of conventional MOS-technology on single silicon chip together with (p–n)-junction temperature sensor and heater-resistor. The responses of MISFETs for different hydrogen concentrations and drain currents were measured. It was shown how the responses’ amplitude and time parameters depend on hydrogen concentrations and the measuring circuit's electric modes. To interpret results there was developed the generalized model of MISFET's responses for different hydrogen concentrations, parameters of which were calculated using experimental data. These models can be used for simulation and prediction performances of MISFET-based sensors and gas-analysis devices.
- ПубликацияОткрытый доступPerformance Degradations of MISFET-Based Hydrogen Sensors with a Pd-Ta 2 O 5 -SiO 2 -Si Structure During Long-Term Operation(2019) Kovalenko, A.; Podlepetsky, B.; Samotaev, N.; Nikiforova, M.; Подлепецкий, Борис Иванович; Самотаев, Николай НиколаевичWe present the generalized experimental results of performance degradation of hydrogen sensors based on metal-insulator-semiconductor field effect transistor (MISFET)with the structure Pd-Ta2O5-SiO2-Si. The n-channel MISFET elements were fabricated on silicon single chips together with temperature sensors and heater-resistors by means of conventional -technology. Two hundred cycles of responses to different hydrogen concentrations were measured during eight weeks using special measuring and temperature stabilization circuitries with a feedback loop based on the chip's thermo-sensor and heater. We show how the response parameters change during long-term tests of sensors under repeated hydrogen impacts. There were two stages of time-dependent response instability, the degradation of which depends on operating conditions, hydrogen concentrations, and time. To interpret results, we proposed the models, parameters of which were calculated using experimental data. These models can be used to predict performances of MISFET-based gas analysis devices for long-term operation.